A compact thermal-via packaging design of GaInP/GaAs collector-up HBTs in small high-power amplifiers

P. H. Lee, Jung-Hua Chou, H. C. Tseng

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

We model the thermal performance of the large thermal via which under the collector-up heterojunction bipolar transistor (HBT) by using a finite element method. A compact thermal-via packaging of GaInP/GaAs collector-up HBTs has been designed and calculated. The results indicate that the configuration can be further reduced by 29% to meet the requirement of small high-power amplifiers for cellular-phone communication systems.

原文English
主出版物標題2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
DOIs
出版狀態Published - 2008 12月 1
事件2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 - Versailles, France
持續時間: 2008 5月 252008 5月 29

出版系列

名字Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(列印)1092-8669

Other

Other2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008
國家/地區France
城市Versailles
期間08-05-2508-05-29

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料

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