A compact thermal-via packaging design of GaInP/GaAs collector-up HBTs in small high-power amplifiers

P. H. Lee, J. H. Chou, H. C. Tseng

研究成果: Conference contribution

摘要

We model the thermal performance of the large thermal via which under the colleetor-up heterojunction bipolar transistor (HBT) by using a finite element method. A compact thermal-via packaging of GaInP/GaAs collector-up HBTs has been designed and calculated. The results indicate that the configuration can be further reduced by 29% to meet the requirement of small high-power amplifiers for cellular-phone communication systems.

原文English
主出版物標題IPRM'07
主出版物子標題IEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings
頁面161-164
頁數4
DOIs
出版狀態Published - 2007 10月 2
事件IPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Matsue, Japan
持續時間: 2007 5月 142007 5月 18

出版系列

名字Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(列印)1092-8669

Other

OtherIPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials
國家/地區Japan
城市Matsue
期間07-05-1407-05-18

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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