A comparative study of fin-last and fin-first SOI FinFETs

Darsen Lu, Josephine Chang, Michael A. Guillorn, Chung Hsun Lin, Jeffrey Johnson, Philip Oldiges, Ken Rim, Mukesh Khare, Wilfried Haensch

研究成果: Conference contribution

1 引文 斯高帕斯(Scopus)

摘要

Two FinFET fabrication processes are compared with simulation: the conventional fin-first process and the novel fin-last process. With the fin-last process, more longitudinal strain can be incorporated into the channel from source and drain SiGe stressor than fin-first. pFET mobility advantage is 15% at fully-strained condition and with silicon recess. Maintaining vertical junction uniformity is the main challenge for fin-last. However, its impact on parasitic resistance and capacitances are small. Vertical junction non-uniformity is improved with source and drain recess and doping optimization.

原文English
主出版物標題2013 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
頁面147-150
頁數4
DOIs
出版狀態Published - 2013
事件18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013 - Glasgow, United Kingdom
持續時間: 2013 九月 32013 九月 5

出版系列

名字International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Other

Other18th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2013
國家United Kingdom
城市Glasgow
期間13-09-0313-09-05

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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