A comparative study of GaAs- and InP-based superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's)

Chun Yuan Chen, Wei Chou Wang, Wen Hui Chiou, Chih Kai Wang, Hung Ming Chuang, Shiou Ying Cheng, Wen Chau Liu

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

The InP/InGaAs and InGaP/GaAs superlattice emitter resonant tunneling bipolar transistors (SE-RTBTs) have been fabricated and demonstrated. By the employment of five-period superlattice in the emitter layer, the RT effect in saturation regime is observed at 77 K for InP/InGaAs SE-RTBT. In addition, due to the larger valence band discontinuity δEV at InGaP/GaAs heterojunction, the RT effect is observed both in saturation and forward active regimes at 300 K for InGaP/GaAs SE-RTBT. The confinement effect for minority carriers is enhanced due to the insertion of superlattice. The common emitter current gains up to 170 and 220 are observed for InP/InGaAs and InGaP/GaAs SE-RTBTs, respectively. Lower offset voltages of about 125 mV are observed in the studied devices.

原文English
文章編號3086
頁(從 - 到)1289-1294
頁數6
期刊Solid-State Electronics
46
發行號9
DOIs
出版狀態Published - 2002

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

指紋

深入研究「A comparative study of GaAs- and InP-based superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's)」主題。共同形成了獨特的指紋。

引用此