A comparative study of gas sensing properties of SnO2 and SnO2:Mo films grown by magnetron sputtering

Wei Che Chang, Shih Chin Lee, Xiaoding Qi

研究成果: Article同行評審

11 引文 斯高帕斯(Scopus)

摘要

Pure and Mo-doped SnO2 films were deposited on the glass substrates by sputtering from the metallic Sn and Mo targets with subsequent annealing in air at various temperatures from 500 to 700°C. The properties of the grown films were studied for gas sensor applications. The optimum annealing temperature was 500°C. The pure and the doped films annealed at this temperature showed best sensitivities for both alcohol and amine gases. While there was no distinct difference between the pure and the Mo-doped films for the alcohol gases at the operating temperature of 400°C, the latter showed clearly improved sensitivities at lower temperature (300°C), e.g., the ethanol sensitivity of SnO2:Mo was 16.47 and 7.97 at 400 and 300°C, respectively, compared to 14.77 and 2.92 for the pure SnO 2. However, the SnO2:Mo films responded much more sensitively to the amine gases than pure SnO2 films. With the optimum Mo content of 7.3 atom %, the doped films showed a sensitivity of as high as 29.49 for hydrazine.

原文English
頁(從 - 到)J245-J250
期刊Journal of the Electrochemical Society
157
發行號7
DOIs
出版狀態Published - 2010 六月 10

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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