@inproceedings{a06fc5c9ad4c45129677bc853aa34dc8,
title = "A comparative study of gate stack material properties and reliability characterization in MOS transistors with optimal ALD Zirconia addition for hafina gate dielectric",
abstract = "In this work, we investigate the influence of incorporation Zirconia (ZrO 2) in gate dielectric HfO 2 on electrical properties and the reliability of nMOSFET for the 28nm technology node. Detailed film physical, chemical and optical properties of Hf 1-xZr xO 2 as a function of Zr content were studied using HRTEM, AR-XPS, spectroscopic ellipsometer. Compared to HfO 2, Hf 1-xZr xO 2 provides lower C-V hysteresis, V t shift (ΔV t) and higher Time to Failure (TTF) lifetimes are achieved with Zr incorporation in an ALD Hf 1-xZr xO 2/SiO2 gate stack. The improved reliability of the Hf 1-xZr xO 2 gate dielectric is attributed to the reduced charge trapping in the Hf 1-xZr xO 2 gate dielectric caused by the Zr incorporation.",
author = "Chiang, {C. K.} and Chang, {J. C.} and Liu, {W. H.} and Liu, {C. C.} and Lin, {J. F.} and Yang, {C. L.} and Wu, {J. Y.} and Chiang, {C. K.} and Wang, {S. J.}",
year = "2012",
doi = "10.1109/IRPS.2012.6241910",
language = "English",
isbn = "9781457716799",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "GD.3.1--GD.3.4",
booktitle = "2012 IEEE International Reliability Physics Symposium, IRPS 2012",
note = "2012 IEEE International Reliability Physics Symposium, IRPS 2012 ; Conference date: 15-04-2012 Through 19-04-2012",
}