A comparative study of gate stack material properties and reliability characterization in MOS transistors with optimal ALD Zirconia addition for hafina gate dielectric

C. K. Chiang, J. C. Chang, W. H. Liu, C. C. Liu, J. F. Lin, C. L. Yang, J. Y. Wu, C. K. Chiang, S. J. Wang

研究成果: Conference contribution

7 引文 斯高帕斯(Scopus)

摘要

In this work, we investigate the influence of incorporation Zirconia (ZrO 2) in gate dielectric HfO 2 on electrical properties and the reliability of nMOSFET for the 28nm technology node. Detailed film physical, chemical and optical properties of Hf 1-xZr xO 2 as a function of Zr content were studied using HRTEM, AR-XPS, spectroscopic ellipsometer. Compared to HfO 2, Hf 1-xZr xO 2 provides lower C-V hysteresis, V t shift (ΔV t) and higher Time to Failure (TTF) lifetimes are achieved with Zr incorporation in an ALD Hf 1-xZr xO 2/SiO2 gate stack. The improved reliability of the Hf 1-xZr xO 2 gate dielectric is attributed to the reduced charge trapping in the Hf 1-xZr xO 2 gate dielectric caused by the Zr incorporation.

原文English
主出版物標題2012 IEEE International Reliability Physics Symposium, IRPS 2012
頁面GD.3.1-GD.3.4
DOIs
出版狀態Published - 2012 九月 28
事件2012 IEEE International Reliability Physics Symposium, IRPS 2012 - Anaheim, CA, United States
持續時間: 2012 四月 152012 四月 19

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
ISSN(列印)1541-7026

Other

Other2012 IEEE International Reliability Physics Symposium, IRPS 2012
國家United States
城市Anaheim, CA
期間12-04-1512-04-19

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • 引用此

    Chiang, C. K., Chang, J. C., Liu, W. H., Liu, C. C., Lin, J. F., Yang, C. L., Wu, J. Y., Chiang, C. K., & Wang, S. J. (2012). A comparative study of gate stack material properties and reliability characterization in MOS transistors with optimal ALD Zirconia addition for hafina gate dielectric. 於 2012 IEEE International Reliability Physics Symposium, IRPS 2012 (頁 GD.3.1-GD.3.4). [6241910] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/IRPS.2012.6241910