A comparative study of gate stack material properties and reliability characterization in MOS transistors with optimal ALD Zirconia addition for hafina gate dielectric

C. K. Chiang, J. C. Chang, W. H. Liu, C. C. Liu, J. F. Lin, C. L. Yang, J. Y. Wu, C. K. Chiang, S. J. Wang

研究成果: Conference contribution

7 引文 斯高帕斯(Scopus)

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Engineering & Materials Science