A comparative study of gate stack material properties and reliability characterization in MOS transistors with optimal ALD Zirconia addition for hafina gate dielectric
- C. K. Chiang
- , J. C. Chang
- , W. H. Liu
- , C. C. Liu
- , J. F. Lin
- , C. L. Yang
- , J. Y. Wu
- , C. K. Chiang
- , S. J. Wang
研究成果: Conference contribution
8
連結會在新分頁中開啟
引文
斯高帕斯（Scopus）