A complete Raman mapping of phase transitions in Si under indentation

C. R. Das, H. C. Hsu, S. Dhara, A. K. Bhaduri, B. Raj, L. C. Chen, K. H. Chen, S. K. Albert, A. Ray, Y. Tzeng

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15 引文 斯高帕斯(Scopus)

摘要

Crystalline Si substrates are studied for pressure-induced phase transformation under indentation at room temperature (RT) using a Berkovich tip. Raman spectroscopy, as a nondestructive tool, is used for the identification of the transformed phases. Raman lines as well as areamapping areused for locating the phases in the indentedregion. Calculation of pressure contours in the indented region is used for understanding the phase distribution. We report here a comprehensive study of all the phases of Si, reported so far, leading to possible understanding of material properties useful for possible electromechanical applications. As a major finding, distribution of the amorphous phase in the indented region deviates from the conventional wisdom of being in the central region alone. We present phase mapping results for both Si(100) and Si(111) substrates.

原文English
頁(從 - 到)334-339
頁數6
期刊Journal of Raman Spectroscopy
41
發行號3
DOIs
出版狀態Published - 2010 三月

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 光譜

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