A comprehensive study of hole collection in heterojunction solar cells

Richard S. Crandall, Eugene Iwaniczko, Jian V. Li, Mathew R. Page

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

We conduct a systematic investigation into the mechanism of hole collection in amorphous/crystalline silicon heterojunctions solar cells using transient-capacitance techniques. The devices are formed by depositing undoped amorphous silicon (i layer) followed by p-type amorphous silicon on n-type crystalline silicon wafers. For i layers varying from 3.2 to 96 nm, we find only a factor of four change in hole collection-rate at low temperature where thermal emission over the valence band offset is precluded. We conclude that holes traverse the i layer by hopping through defects rather than direct tunneling through the entire i layer. This process is weakly thermally activated with a rate above 1 × 104 s-1 at room temperature. Near room temperature and with thick i layers, we observe hole collection with a high activation energy that depends on measurement conditions. We demonstrate that hopping through defects is the dominant mode of hole collection for solar cell operation at room temperature and above.

原文English
文章編號093713
期刊Journal of Applied Physics
112
發行號9
DOIs
出版狀態Published - 2012 十一月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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