A comprehensive study of polysilicon resistors for CMOS ULSI applications

Hung Ming Chuang, Kong Beng Thei, Sheng Fu Tsai, Chun Tsen Lu, Xin Da Liao, Kuan Ming Lee, Hon Rung Chen, Wen Chau Liu

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)


The characteristics of polysilicon resistors for CMOS ULSI applications have been investigated. Based on the presented sub-quarter micron CMOS borderless contact, both n+ and p+ polysilicon resistors with Ti- and Co-silicide self-aligned process are used at the neds of each resistor. A simple and useful model is proposed to analyse and calculate some important parameters of polysilicon resistors including electrical delta W(ΔW), interface resistance Rinterface, and pure sheet resistance Rpure. Furthermore, the characteristics of voltage-coefficient resistor, temperature-coefficient resistor, and resistor mismatching are also studied. An interesting sine-wave voltage-dependent characteristic due to the strong relation to the Rinterface has been modelled in this paper. This approach can substantially help engineers in designing and fabricating the precise polysilicon resistors in sub-quarter micron CMOS ULSI technology.

頁(從 - 到)193-208
期刊Superlattices and Microstructures
出版狀態Published - 2003 4月

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 電氣與電子工程


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