A Comprehensive Study of Total Ionizing Dose Effect on the Electrical Performance of the GaN MIS-HEMT

Chih Yi Yang, Chin Han Chung, Wei Yu, Cheng Jun Ma, Sih Rong Wu, Abhisek Dixit, Ching Ting Lee, Edward Yi Chang

研究成果: Article同行評審

摘要

In this work, the effect of Total Ionizing Dose (TID) on the performance of GaN on Si MIS-HEMT power devices with in-situ SiN cap layer is investigated. 13 samples were exposed to different accumulated dose (100 krad and 400 krad) of Co $^{60}~\gamma $ -ray irradiation with two bias conditions (grounded and stressed). The characteristics of the devices after irradiation experiment were evaluated by measuring VTH shift, on-resistance (RON), and dynamic RON. A comprehensive study of TID effects are demonstrated in this article to verify different mechanisms and their interactions. Simulations using PHITs were also carried out to further confirm the damages in the epitaxial structure by the accumulated dose.

原文English
頁(從 - 到)276-281
頁數6
期刊IEEE Transactions on Device and Materials Reliability
22
發行號2
DOIs
出版狀態Published - 2022 6月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 安全、風險、可靠性和品質
  • 電氣與電子工程

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