@article{8e72bc3d6b4443c3967cab20830fd617,
title = "A CuO nanowire infrared photodetector",
abstract = "The authors report the growth of CuO nanowires on an oxidized Cu wire and the fabrication of CuO infrared photodetector. By annealing the Cu wire at 500 °C in air for 2 h, high density CuO nanowires with an average length of 1.2 μm and an average diameter of 50 nm were successfully grown vertically on the CuO wire. Using an 808 nm laser diode as the excitation source, it was found that rise-time and fall-time of the fabricated CuO infrared photodetector were 15 and 17 s, respectively, when measured in vacuum.",
author = "Wang, {S. B.} and Hsiao, {C. H.} and Chang, {S. J.} and Lam, {K. T.} and Wen, {K. H.} and Hung, {S. C.} and Young, {S. J.} and Huang, {B. R.}",
note = "Funding Information: This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University (NCKU) , Taiwan ( D97-2700 ), and in part by the Advanced Optoelectronic Technology Center, NCKU , under projects from the Ministry of Education, and in part by the Center for Condensed Matter Sciences (CCMS), National Taiwan University . Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",
year = "2011",
month = nov,
doi = "10.1016/j.sna.2011.09.011",
language = "English",
volume = "171",
pages = "207--211",
journal = "Sensors and Actuators A: Physical",
issn = "0924-4247",
publisher = "Elsevier",
number = "2",
}