A CuO nanowire infrared photodetector

S. B. Wang; C. H. Hsiao; S. J. Chang; K. T. Lam; K. H. Wen; S. C. Hung; S. J. Young; B. R. Huang

doi:10.1016/j.sna.2011.09.011

A CuO nanowire infrared photodetector

S. B. Wang, C. H. Hsiao, S. J. Chang, K. T. Lam, K. H. Wen, S. C. Hung, S. J. Young, B. R. Huang

研究成果: Article › 同行評審

188 引文斯高帕斯（Scopus）

摘要

The authors report the growth of CuO nanowires on an oxidized Cu wire and the fabrication of CuO infrared photodetector. By annealing the Cu wire at 500 °C in air for 2 h, high density CuO nanowires with an average length of 1.2 μm and an average diameter of 50 nm were successfully grown vertically on the CuO wire. Using an 808 nm laser diode as the excitation source, it was found that rise-time and fall-time of the fabricated CuO infrared photodetector were 15 and 17 s, respectively, when measured in vacuum.

原文	English
頁（從 - 到）	207-211
頁數	5
期刊	Sensors and Actuators, A: Physical
卷	171
發行號	2
DOIs	https://doi.org/10.1016/j.sna.2011.09.011
出版狀態	Published - 2011 11月

All Science Journal Classification (ASJC) codes

電子、光磁材料
儀器
凝聚態物理學
表面、塗料和薄膜
金屬和合金
電氣與電子工程

存取文件

10.1016/j.sna.2011.09.011

其它文件與鏈接

Link to publication in Scopus

引用此

@article{8e72bc3d6b4443c3967cab20830fd617,

title = "A CuO nanowire infrared photodetector",

abstract = "The authors report the growth of CuO nanowires on an oxidized Cu wire and the fabrication of CuO infrared photodetector. By annealing the Cu wire at 500 °C in air for 2 h, high density CuO nanowires with an average length of 1.2 μm and an average diameter of 50 nm were successfully grown vertically on the CuO wire. Using an 808 nm laser diode as the excitation source, it was found that rise-time and fall-time of the fabricated CuO infrared photodetector were 15 and 17 s, respectively, when measured in vacuum.",

author = "Wang, {S. B.} and Hsiao, {C. H.} and Chang, {S. J.} and Lam, {K. T.} and Wen, {K. H.} and Hung, {S. C.} and Young, {S. J.} and Huang, {B. R.}",

note = "Funding Information: This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University (NCKU) , Taiwan ( D97-2700 ), and in part by the Advanced Optoelectronic Technology Center, NCKU , under projects from the Ministry of Education, and in part by the Center for Condensed Matter Sciences (CCMS), National Taiwan University . ",

year = "2011",

month = nov,

doi = "10.1016/j.sna.2011.09.011",

language = "English",

volume = "171",

pages = "207--211",

journal = "Sensors and Actuators, A: Physical",

issn = "0924-4247",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - A CuO nanowire infrared photodetector

AU - Wang, S. B.

AU - Hsiao, C. H.

AU - Chang, S. J.

AU - Lam, K. T.

AU - Wen, K. H.

AU - Hung, S. C.

AU - Young, S. J.

AU - Huang, B. R.

N1 - Funding Information: This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University (NCKU) , Taiwan ( D97-2700 ), and in part by the Advanced Optoelectronic Technology Center, NCKU , under projects from the Ministry of Education, and in part by the Center for Condensed Matter Sciences (CCMS), National Taiwan University .

PY - 2011/11

Y1 - 2011/11

N2 - The authors report the growth of CuO nanowires on an oxidized Cu wire and the fabrication of CuO infrared photodetector. By annealing the Cu wire at 500 °C in air for 2 h, high density CuO nanowires with an average length of 1.2 μm and an average diameter of 50 nm were successfully grown vertically on the CuO wire. Using an 808 nm laser diode as the excitation source, it was found that rise-time and fall-time of the fabricated CuO infrared photodetector were 15 and 17 s, respectively, when measured in vacuum.

AB - The authors report the growth of CuO nanowires on an oxidized Cu wire and the fabrication of CuO infrared photodetector. By annealing the Cu wire at 500 °C in air for 2 h, high density CuO nanowires with an average length of 1.2 μm and an average diameter of 50 nm were successfully grown vertically on the CuO wire. Using an 808 nm laser diode as the excitation source, it was found that rise-time and fall-time of the fabricated CuO infrared photodetector were 15 and 17 s, respectively, when measured in vacuum.

UR - http://www.scopus.com/inward/record.url?scp=80055053845&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80055053845&partnerID=8YFLogxK

U2 - 10.1016/j.sna.2011.09.011

DO - 10.1016/j.sna.2011.09.011

M3 - Article

AN - SCOPUS:80055053845

SN - 0924-4247

VL - 171

SP - 207

EP - 211

JO - Sensors and Actuators, A: Physical

JF - Sensors and Actuators, A: Physical

IS - 2

ER -

A CuO nanowire infrared photodetector

摘要

All Science Journal Classification (ASJC) codes

存取文件

其它文件與鏈接

指紋

引用此