A DC model for asymmetric trapezoidal gate MOSFET's in strong inversion

Shyh Chyi Wong, Shyh Yuan Hsu, Yeong Her Wang, Mau Phon Houng, Shih Keng Cho

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

Asymmetric trapezoidal gate (ATG) MOSFET is an innovative device having a structure of a relatively narrow drainside width in order to reduce parasitic effects for enhancing device performance. In this paper, we develop a DC model for ATG MOSFET's. We use a charge-based approach to explore the asymmetric feature between source and drain of ATG MOSFET's, and obtain analytic formulae for threshold voltage, body effect, drain current, and channel length modulation effect in linear and saturation regions for both forward and reverse modes of operations. The model provides a physical analysis of the ATG structure, shows good agreement with measurement data, and is useful in circuit simulation with ATG devices.

原文English
頁(從 - 到)1459-1467
頁數9
期刊IEEE Transactions on Electron Devices
45
發行號7
DOIs
出版狀態Published - 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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