@article{f6d704d1cc2b4ab6a989cbc81563cb56,
title = "A deep UV sensitive Ta2O5/a - IGZO TFT",
abstract = "The authors report the fabrication of a deep-ultraviolet (deep-UV) sensitive a-IGZO thin-film-transistor (TFT) with a Ta2O5 gate dielectric. It was found that carrier mobility, threshold voltage and subthreshold swing were 48.5 cm2Vs, 1.25 V and 0.49 V/decade, respectively, when measured in dark. It was also found that measured current increased from 1.5 × 10-9 A to 5.56 × 10-5 A, as we illuminated the sample with λ = 250 nm UV light when VG was biased at 0 V. Furthermore, it was found that deep-UV-to-visible rejection ratio could reach 1.0 × 106 for the fabricated Ta 2O5/a-IGZO TFT.",
author = "Chiu, {C. J.} and Weng, {W. Y.} and Chang, {S. J.} and Chang, {Sheng Po} and Chang, {T. H.}",
note = "Funding Information: Manuscript received March 27, 2011; accepted April 16, 2011. Date of publication April 25, 2011; date of current version October 26, 2011. This work was supported in part by the Center for Micro/Nano Science and Technology and in part by the Advanced Optoelectronic Technology Center, NCKU, under projects from the Ministry of Education, Taiwan and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract 98-D0204-6. The associate editor coordinating the review of this paper and approving it for publication was Dr. M. Abedin.",
year = "2011",
doi = "10.1109/JSEN.2011.2146770",
language = "English",
volume = "11",
pages = "2902--2905",
journal = "IEEE Sensors Journal",
issn = "1530-437X",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}