A deep UV sensitive Ta2O5/a - IGZO TFT

C. J. Chiu, W. Y. Weng, S. J. Chang, Sheng Po Chang, T. H. Chang

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

The authors report the fabrication of a deep-ultraviolet (deep-UV) sensitive a-IGZO thin-film-transistor (TFT) with a Ta2O5 gate dielectric. It was found that carrier mobility, threshold voltage and subthreshold swing were 48.5 cm2Vs, 1.25 V and 0.49 V/decade, respectively, when measured in dark. It was also found that measured current increased from 1.5 × 10-9 A to 5.56 × 10-5 A, as we illuminated the sample with λ = 250 nm UV light when VG was biased at 0 V. Furthermore, it was found that deep-UV-to-visible rejection ratio could reach 1.0 × 106 for the fabricated Ta 2O5/a-IGZO TFT.

原文English
文章編號5755165
頁(從 - 到)2902-2905
頁數4
期刊IEEE Sensors Journal
11
發行號11
DOIs
出版狀態Published - 2011

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

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