A dopingless FET with metal-insulator-semiconductor contacts

Kuo Hsing Kao, Liang Yu Chen

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

By adopting the charge-plasma concept, dopingless FETs with metal-semiconductor and metal-insulator-semiconductor (MIS) contacts in parallel at the source/drain (SD) have been studied in this letter. Currents are found to flow mainly through the MIS contacts for a given SD metal workfunction when the insulator thickness is thin enough. In order to avoid the possible penalty caused by Fermi level pinning, the dopingless FET with only SD MIS contacts has been proposed as well. The impacts of insulator material parameters, such as bandgap, electron affinity, dielectric constant, and physical thickness, on the electrical characteristics of the dopingless FET have been investigated systematically. Based on numerical simulations, this letter provides a general guideline with physical insights for designing dopingless FETs with high-permittivity insulator at the SD MIS contacts.

原文English
文章編號7742896
頁(從 - 到)5-8
頁數4
期刊IEEE Electron Device Letters
38
發行號1
DOIs
出版狀態Published - 2017 一月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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