A double-barrier-emitter triangular-barrier optoelectronic switch

Der Feng Guo, Jing Yuh Chen, Hung Ming Chuang, Chun Yuan Chen, Wen Chau Liu

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this study, a triangular-barrier and a double-barrier structure are combined to form a double-barrier-emitter triangular-barrier optoelectronic switch (DTOS). In the structure center of the triangular barrier, a p-type delta-doped quantum well is inserted to enhance the hole confinement. Owing to the resonant tunneling through the double-barrier structure and avalanche multiplication in the reverse-biased junction, N-shaped and S-shaped negative-differential-resistance (NDR) phenomena occur in the current-voltage (I-V) characteristics under normal and reverse operation modes, respectively. The NDR characteristics show variations from dark to illumination conditions. Temperature effects on the NDRs of the DTOS are also obvious. The illumination and temperature influences on the device characteristics are investigated in this paper.

原文English
頁(從 - 到)413-419
頁數7
期刊IEEE Journal of Quantum Electronics
40
發行號4
DOIs
出版狀態Published - 2004 4月

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學
  • 凝聚態物理學
  • 電氣與電子工程

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