A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier

H. Z. Liu, C. C. Wang, Y. H. Wang, J. W. Huang, C. H. Chang, W. Wu, C. L. Wu, C. S. Chang

研究成果: Paper

10 引文 斯高帕斯(Scopus)

摘要

In this paper, a Ku-Band 1 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU applications is demonstrated. This four-stage amplifier is designed to fully match for a 50 ohm input and output impedance. With 7 Volts and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.

原文English
頁面33-36
頁數4
出版狀態Published - 2002 一月 1
事件Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, United States
持續時間: 2002 十月 202002 十月 23

Other

OtherProceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)
國家United States
城市Monterey, CA
期間02-10-2002-10-23

    指紋

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此

Liu, H. Z., Wang, C. C., Wang, Y. H., Huang, J. W., Chang, C. H., Wu, W., Wu, C. L., & Chang, C. S. (2002). A four-stage Ku-Band 1 watt PHEMT MMIC power amplifier. 33-36. 論文發表於 Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States.