A gate-free monolayer WSe2 pn diode

Jhih Wei Chen, Shun Tsung Lo, Sheng Chin Ho, Sheng Shong Wong, Thi Hai Yen Vu, Xin Quan Zhang, Yi De Liu, Yu You Chiou, Yu Xun Chen, Jan Chi Yang, Yi Chun Chen, Ying Hao Chu, Yi Hsien Lee, Chung Jen Chung, Tse Ming Chen, Chia Hao Chen, Chung Lin Wu

研究成果: Article

25 引文 斯高帕斯(Scopus)

摘要

Interest in bringing p- and n-type monolayer semiconducting transition metal dichalcogenides (TMD) into contact to form rectifying pn diode has thrived since it is crucial to control the electrical properties in two-dimensional (2D) electronic and optoelectronic devices. Usually this involves vertically stacking different TMDs with pn heterojunction or, laterally manipulating carrier density by gate biasing. Here, by utilizing a locally reversed ferroelectric polarization, we laterally manipulate the carrier density and created a WSe2 pn homojunction on the supporting ferroelectric BiFeO3 substrate. This non-volatile WSe2 pn homojunction is demonstrated with optical and scanning probe methods and scanning photoelectron micro-spectroscopy. A homo-interface is a direct manifestation of our WSe2 pn diode, which can be quantitatively understood as a clear rectifying behavior. The non-volatile confinement of carriers and associated gate-free pn homojunction can be an addition to the 2D electron–photon toolbox and pave the way to develop laterally 2D electronics and photonics.

原文English
文章編號3143
期刊Nature communications
9
發行號1
DOIs
出版狀態Published - 2018 十二月 1

    指紋

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

引用此

Chen, J. W., Lo, S. T., Ho, S. C., Wong, S. S., Vu, T. H. Y., Zhang, X. Q., Liu, Y. D., Chiou, Y. Y., Chen, Y. X., Yang, J. C., Chen, Y. C., Chu, Y. H., Lee, Y. H., Chung, C. J., Chen, T. M., Chen, C. H., & Wu, C. L. (2018). A gate-free monolayer WSe2 pn diode. Nature communications, 9(1), [3143]. https://doi.org/10.1038/s41467-018-05326-x