A Gated-Diode ESD SCR-Incorporated BJT for Reversed Floating P+Junction Modulation

Chih Yao Huang, Quo Ker Chen, Ji Fan Chi, Tzuen Hsi Huang

研究成果: Article同行評審

摘要

This work presents a novel gated- diode SCR-incorporated BJT (SIB) structure for ESD protection purpose. A gated diode built in the SIB structure modulates reverse-biased P+ / N-well diode for better junction breakdown control. This device could achieve high TLP second breakdown current /ESD threshold close to that of an SCR, very high holding voltage, and reduced trigger voltage, as well as excellent latchup immunity.

原文English
文章編號11
頁(從 - 到)64-69
頁數6
期刊IEEE Transactions on Device and Materials Reliability
21
發行號1
DOIs
出版狀態Published - 2021 三月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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