This work presents a novel gated- diode SCR-incorporated BJT (SIB) structure for ESD protection purpose. A gated diode built in the SIB structure modulates reverse-biased P+ / N-well diode for better junction breakdown control. This device could achieve high TLP second breakdown current /ESD threshold close to that of an SCR, very high holding voltage, and reduced trigger voltage, as well as excellent latchup immunity.
|頁（從 - 到）||64-69|
|期刊||IEEE Transactions on Device and Materials Reliability|
|出版狀態||Published - 2021 3月|
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