摘要
This work presents a novel gated- diode SCR-incorporated BJT (SIB) structure for ESD protection purpose. A gated diode built in the SIB structure modulates reverse-biased P+ / N-well diode for better junction breakdown control. This device could achieve high TLP second breakdown current /ESD threshold close to that of an SCR, very high holding voltage, and reduced trigger voltage, as well as excellent latchup immunity.
原文 | English |
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文章編號 | 11 |
頁(從 - 到) | 64-69 |
頁數 | 6 |
期刊 | IEEE Transactions on Device and Materials Reliability |
卷 | 21 |
發行號 | 1 |
DOIs | |
出版狀態 | Published - 2021 三月 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Safety, Risk, Reliability and Quality
- Electrical and Electronic Engineering