TY - JOUR
T1 - A Green Strategy for Developing a Self-Healing Gelatin Resistive Memory Device
AU - Chang, Yu Chi
AU - Jian, Jia Cheng
AU - Hsu, Ya Lan
AU - Huang, Wei Yun
AU - Young, Sheng Joue
N1 - Funding Information:
This research was sponsored by the Ministry of Science and Technology of Taiwan under Grant no. MOST 108-2636-E-006-008. We also thank Mr. Jui-Chin Lee (Instrument Center NCKU) for sample preparation and XPS investigation.
Publisher Copyright:
©
Copyright:
Copyright 2021 Elsevier B.V., All rights reserved.
PY - 2020/11/13
Y1 - 2020/11/13
N2 - Self-healing gelatin resistive random access memory (RRAM), namely, SHG RRAM, is utilized by incorporating the reversible imine bond as self-healing points into the gelatin. With the reformation of the dynamic imine bonds, the damaged SHG RRAM can repeatedly restore its memory properties after healing at 60 °C. Compared with the pristine SHG RRAM, the SHG RRAM after the healing process exhibits a higher ON/OFF ratio of over 105. This interesting phenomenon could be attributed to the bending and heating process induced C-C sp3 bonds, which consequently decrease the HRS current. In addition, the CAFM images can show that the filament paths occurred at the healed crack edge, leading to usefulness of the cracks in the formation of filament paths. These results repudiated the concept that cracks due to bending can reduce the performance of electronics. Moreover, the SHG RRAM after the healing process shows reproducible resistive switching, acceptable electrical uniformity, and stable retention characteristics. The self-healing gelatin material could provide a potential opportunity for the future development of biopolymers used in smart electronics applications.
AB - Self-healing gelatin resistive random access memory (RRAM), namely, SHG RRAM, is utilized by incorporating the reversible imine bond as self-healing points into the gelatin. With the reformation of the dynamic imine bonds, the damaged SHG RRAM can repeatedly restore its memory properties after healing at 60 °C. Compared with the pristine SHG RRAM, the SHG RRAM after the healing process exhibits a higher ON/OFF ratio of over 105. This interesting phenomenon could be attributed to the bending and heating process induced C-C sp3 bonds, which consequently decrease the HRS current. In addition, the CAFM images can show that the filament paths occurred at the healed crack edge, leading to usefulness of the cracks in the formation of filament paths. These results repudiated the concept that cracks due to bending can reduce the performance of electronics. Moreover, the SHG RRAM after the healing process shows reproducible resistive switching, acceptable electrical uniformity, and stable retention characteristics. The self-healing gelatin material could provide a potential opportunity for the future development of biopolymers used in smart electronics applications.
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U2 - 10.1021/acsapm.0c01119
DO - 10.1021/acsapm.0c01119
M3 - Article
AN - SCOPUS:85097541705
VL - 2
SP - 5318
EP - 5326
JO - ACS Applied Polymer Materials
JF - ACS Applied Polymer Materials
SN - 2637-6105
IS - 11
ER -