Self-healing gelatin resistive random access memory (RRAM), namely, SHG RRAM, is utilized by incorporating the reversible imine bond as self-healing points into the gelatin. With the reformation of the dynamic imine bonds, the damaged SHG RRAM can repeatedly restore its memory properties after healing at 60 °C. Compared with the pristine SHG RRAM, the SHG RRAM after the healing process exhibits a higher ON/OFF ratio of over 105. This interesting phenomenon could be attributed to the bending and heating process induced C-C sp3 bonds, which consequently decrease the HRS current. In addition, the CAFM images can show that the filament paths occurred at the healed crack edge, leading to usefulness of the cracks in the formation of filament paths. These results repudiated the concept that cracks due to bending can reduce the performance of electronics. Moreover, the SHG RRAM after the healing process shows reproducible resistive switching, acceptable electrical uniformity, and stable retention characteristics. The self-healing gelatin material could provide a potential opportunity for the future development of biopolymers used in smart electronics applications.
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