A Harmonic Radar Tag With High Detection Range Utilizing Ge FinFETs CMOS Technology

Cheng Hung Hsieh, Tzu Chieh Hong, Chiung Yi Yang, Yi Ho Chen, Xin Ren Yu, Wen Hsiang Lu, Ricky W. Chuang, Zuo Min Tsai, Yao Jen Lee, Yiming Li, Wen Fa Wu, Tien Sheng Chao, Seiji Samukawa, Yeong Her Wang, Wen Kuan Yeh, Jenn Hwan Tarng

研究成果: Article同行評審

摘要

This study fabricated and verified a germanium (Ge) fin field-effect transistor (FinFET) on developed GeSOI platform. The Ge FinFETs were demonstrated for radio-frequency (RF) applications with a harmonic radar tag. The relation between the detection range (Rd), received power (Pr), and threshold voltage (Vth) of a diode was qualitatively discussed. To meet the requirement of a low Vth, two kinds of Ge FinFETs with different metal gates were fabricated and compared. After the evaluation of electrical characteristics of n-type and p-type Ge FinFETs with different fin numbers, a tag for harmonic radar was designed by integrating diode-connected TiN gate 1-fin Ge FinFETs (Vth = 0.1 V) with a high impedance antenna. The RF performance was evaluated at 9.4 GHz and 18.8 GHz. The results indicated a 50 % improvement in the Rd as compared to the tag using a commercial Schottky diode. Therefore, the proposed low-Vth Ge FinFET on developed GeSOI platform for complementary metal–oxide–semiconductor (CMOS) is promising for high-sensitivity harmonic radar applications.

原文English
頁(從 - 到)1798-1801
頁數4
期刊IEEE Electron Device Letters
43
發行號11
DOIs
出版狀態Published - 2022 11月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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