A high-breakdown and low-offset voltage InGaP/GaAs heterostructure bipolar transistor for power system applications

Wen-Chau Liu, S. Y. Cheng, W. C. Wang, J. Y. Chen, H. J. Pan, S. C. Feng, K. H. Yu

研究成果: Paper

摘要

Due to the high bandgap (E g =1.9eV) and etching selectively of In 0.5 Ga 0.5 P material, the InGaP/GaAs material system has been proposed to replace the AlGaAs/GaAs. Undoped or lighted doped InGaP, with a relatively high resistance, was considered well as an "insulator". The wide bandgap characteristics enhance the breakdown voltage and, thus, the power handling capabilities of the device for high power applications. From the device point of view, the high breakdown voltage is an important requirement for high power operations. The wide-gap InGaP was also used to increase the collector breakdown voltage in an NpN double heterojunction bipolar transistors (DHBT's). For InGaP/GaAs DHBT's, the electron blocking effect associated with the presented ΔE C between B-C heterojunction could cause a degraded current gain. Therefore, it is necessary to suppress the electron blocking effect which mainly resulting from the ΔE C at BC heterojunction. In this paper, a new InGaP/GaAs heterostructure transistor with a δ-doped wide-gap collector structure has been fabricated successfully and demonstrated. The studied device takes the advantages of the heterostructure-emitter bipolar transistor (HEBT) and DHBT devices. Due to the employed effective E-B homojunction and the δ-doped sheet between base-collector junction, the lower offset and saturation voltages may be achieved.

原文English
DOIs
出版狀態Published - 1999 十二月 1
事件34th Intersociety Energy Conversion Engineering Conference - Vancouver, BC, Canada
持續時間: 1999 八月 21999 八月 5

Other

Other34th Intersociety Energy Conversion Engineering Conference
國家Canada
城市Vancouver, BC
期間99-08-0299-08-05

指紋

Bipolar transistors
Heterojunctions
Heterojunction bipolar transistors
Electric breakdown
Electric potential
Energy gap
Electrons
Etching
Transistors

All Science Journal Classification (ASJC) codes

  • Automotive Engineering
  • Safety, Risk, Reliability and Quality
  • Pollution
  • Industrial and Manufacturing Engineering

引用此文

Liu, W-C., Cheng, S. Y., Wang, W. C., Chen, J. Y., Pan, H. J., Feng, S. C., & Yu, K. H. (1999). A high-breakdown and low-offset voltage InGaP/GaAs heterostructure bipolar transistor for power system applications. 論文發表於 34th Intersociety Energy Conversion Engineering Conference, Vancouver, BC, Canada. https://doi.org/10.4271/1999-01-2493
Liu, Wen-Chau ; Cheng, S. Y. ; Wang, W. C. ; Chen, J. Y. ; Pan, H. J. ; Feng, S. C. ; Yu, K. H. / A high-breakdown and low-offset voltage InGaP/GaAs heterostructure bipolar transistor for power system applications. 論文發表於 34th Intersociety Energy Conversion Engineering Conference, Vancouver, BC, Canada.
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abstract = "Due to the high bandgap (E g =1.9eV) and etching selectively of In 0.5 Ga 0.5 P material, the InGaP/GaAs material system has been proposed to replace the AlGaAs/GaAs. Undoped or lighted doped InGaP, with a relatively high resistance, was considered well as an {"}insulator{"}. The wide bandgap characteristics enhance the breakdown voltage and, thus, the power handling capabilities of the device for high power applications. From the device point of view, the high breakdown voltage is an important requirement for high power operations. The wide-gap InGaP was also used to increase the collector breakdown voltage in an NpN double heterojunction bipolar transistors (DHBT's). For InGaP/GaAs DHBT's, the electron blocking effect associated with the presented ΔE C between B-C heterojunction could cause a degraded current gain. Therefore, it is necessary to suppress the electron blocking effect which mainly resulting from the ΔE C at BC heterojunction. In this paper, a new InGaP/GaAs heterostructure transistor with a δ-doped wide-gap collector structure has been fabricated successfully and demonstrated. The studied device takes the advantages of the heterostructure-emitter bipolar transistor (HEBT) and DHBT devices. Due to the employed effective E-B homojunction and the δ-doped sheet between base-collector junction, the lower offset and saturation voltages may be achieved.",
author = "Wen-Chau Liu and Cheng, {S. Y.} and Wang, {W. C.} and Chen, {J. Y.} and Pan, {H. J.} and Feng, {S. C.} and Yu, {K. H.}",
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Liu, W-C, Cheng, SY, Wang, WC, Chen, JY, Pan, HJ, Feng, SC & Yu, KH 1999, 'A high-breakdown and low-offset voltage InGaP/GaAs heterostructure bipolar transistor for power system applications', 論文發表於 34th Intersociety Energy Conversion Engineering Conference, Vancouver, BC, Canada, 99-08-02 - 99-08-05. https://doi.org/10.4271/1999-01-2493

A high-breakdown and low-offset voltage InGaP/GaAs heterostructure bipolar transistor for power system applications. / Liu, Wen-Chau; Cheng, S. Y.; Wang, W. C.; Chen, J. Y.; Pan, H. J.; Feng, S. C.; Yu, K. H.

1999. 論文發表於 34th Intersociety Energy Conversion Engineering Conference, Vancouver, BC, Canada.

研究成果: Paper

TY - CONF

T1 - A high-breakdown and low-offset voltage InGaP/GaAs heterostructure bipolar transistor for power system applications

AU - Liu, Wen-Chau

AU - Cheng, S. Y.

AU - Wang, W. C.

AU - Chen, J. Y.

AU - Pan, H. J.

AU - Feng, S. C.

AU - Yu, K. H.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - Due to the high bandgap (E g =1.9eV) and etching selectively of In 0.5 Ga 0.5 P material, the InGaP/GaAs material system has been proposed to replace the AlGaAs/GaAs. Undoped or lighted doped InGaP, with a relatively high resistance, was considered well as an "insulator". The wide bandgap characteristics enhance the breakdown voltage and, thus, the power handling capabilities of the device for high power applications. From the device point of view, the high breakdown voltage is an important requirement for high power operations. The wide-gap InGaP was also used to increase the collector breakdown voltage in an NpN double heterojunction bipolar transistors (DHBT's). For InGaP/GaAs DHBT's, the electron blocking effect associated with the presented ΔE C between B-C heterojunction could cause a degraded current gain. Therefore, it is necessary to suppress the electron blocking effect which mainly resulting from the ΔE C at BC heterojunction. In this paper, a new InGaP/GaAs heterostructure transistor with a δ-doped wide-gap collector structure has been fabricated successfully and demonstrated. The studied device takes the advantages of the heterostructure-emitter bipolar transistor (HEBT) and DHBT devices. Due to the employed effective E-B homojunction and the δ-doped sheet between base-collector junction, the lower offset and saturation voltages may be achieved.

AB - Due to the high bandgap (E g =1.9eV) and etching selectively of In 0.5 Ga 0.5 P material, the InGaP/GaAs material system has been proposed to replace the AlGaAs/GaAs. Undoped or lighted doped InGaP, with a relatively high resistance, was considered well as an "insulator". The wide bandgap characteristics enhance the breakdown voltage and, thus, the power handling capabilities of the device for high power applications. From the device point of view, the high breakdown voltage is an important requirement for high power operations. The wide-gap InGaP was also used to increase the collector breakdown voltage in an NpN double heterojunction bipolar transistors (DHBT's). For InGaP/GaAs DHBT's, the electron blocking effect associated with the presented ΔE C between B-C heterojunction could cause a degraded current gain. Therefore, it is necessary to suppress the electron blocking effect which mainly resulting from the ΔE C at BC heterojunction. In this paper, a new InGaP/GaAs heterostructure transistor with a δ-doped wide-gap collector structure has been fabricated successfully and demonstrated. The studied device takes the advantages of the heterostructure-emitter bipolar transistor (HEBT) and DHBT devices. Due to the employed effective E-B homojunction and the δ-doped sheet between base-collector junction, the lower offset and saturation voltages may be achieved.

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Liu W-C, Cheng SY, Wang WC, Chen JY, Pan HJ, Feng SC 等. A high-breakdown and low-offset voltage InGaP/GaAs heterostructure bipolar transistor for power system applications. 1999. 論文發表於 34th Intersociety Energy Conversion Engineering Conference, Vancouver, BC, Canada. https://doi.org/10.4271/1999-01-2493