A high-breakdown voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs heterojunction camel-gate transistor for power system applications

Wen-Chau Liu; W. L. Chang; J. Y. Chen; H. J. Pan; W. C. Wang; K. H. Yu; S. C. Feng

doi:10.4271/1999-01-2494

A high-breakdown voltage n⁺-GaAs/δ (p⁺)-GaInP/ n-GaAs heterojunction camel-gate transistor for power system applications

Wen-Chau Liu, W. L. Chang, J. Y. Chen, H. J. Pan, W. C. Wang, K. H. Yu, S. C. Feng

研究成果: Paper › 同行評審

摘要

A high-breakdown-voltage n⁺-GaAs/δ (p⁺)-GaInP/ n-GaAs camel-gate field-effect transistor with the triple-step doped-channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V at a gate current of 1 mA/mm and a very high breakdown voltage of 40 V with the low gate leakage current of 400 μA/mm are obtained. The measured transconductance is 145 mS/mm with the current gain cut-off frequency f_T of 17 GHz and the maximum oscillation frequency f _max of 33 GHz for a 1×100 um² device. Consequently, based on the remarkable experimental results, the studied device shows a promise for high-power circuit applications.

原文	English
DOIs	https://doi.org/10.4271/1999-01-2494
出版狀態	Published - 1999 12月 1
事件	34th Intersociety Energy Conversion Engineering Conference - Vancouver, BC, Canada 持續時間: 1999 8月 2 → 1999 8月 5

Other

Other	34th Intersociety Energy Conversion Engineering Conference
國家/地區	Canada
城市	Vancouver, BC
期間	99-08-02 → 99-08-05

All Science Journal Classification (ASJC) codes

汽車工程
安全、風險、可靠性和品質
污染
工業與製造工程

存取文件

10.4271/1999-01-2494

其它文件與鏈接

引用此

@conference{7650de86ecd3412394a3f89d6b561fa1,

title = "A high-breakdown voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs heterojunction camel-gate transistor for power system applications",

abstract = "A high-breakdown-voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs camel-gate field-effect transistor with the triple-step doped-channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V at a gate current of 1 mA/mm and a very high breakdown voltage of 40 V with the low gate leakage current of 400 μA/mm are obtained. The measured transconductance is 145 mS/mm with the current gain cut-off frequency fT of 17 GHz and the maximum oscillation frequency f max of 33 GHz for a 1×100 um2 device. Consequently, based on the remarkable experimental results, the studied device shows a promise for high-power circuit applications.",

author = "Wen-Chau Liu and Chang, {W. L.} and Chen, {J. Y.} and Pan, {H. J.} and Wang, {W. C.} and Yu, {K. H.} and Feng, {S. C.}",

year = "1999",

month = dec,

day = "1",

doi = "10.4271/1999-01-2494",

language = "English",

note = "34th Intersociety Energy Conversion Engineering Conference ; Conference date: 02-08-1999 Through 05-08-1999",

}

TY - CONF

T1 - A high-breakdown voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs heterojunction camel-gate transistor for power system applications

AU - Liu, Wen-Chau

AU - Chang, W. L.

AU - Chen, J. Y.

AU - Pan, H. J.

AU - Wang, W. C.

AU - Yu, K. H.

AU - Feng, S. C.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - A high-breakdown-voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs camel-gate field-effect transistor with the triple-step doped-channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V at a gate current of 1 mA/mm and a very high breakdown voltage of 40 V with the low gate leakage current of 400 μA/mm are obtained. The measured transconductance is 145 mS/mm with the current gain cut-off frequency fT of 17 GHz and the maximum oscillation frequency f max of 33 GHz for a 1×100 um2 device. Consequently, based on the remarkable experimental results, the studied device shows a promise for high-power circuit applications.

AB - A high-breakdown-voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs camel-gate field-effect transistor with the triple-step doped-channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V at a gate current of 1 mA/mm and a very high breakdown voltage of 40 V with the low gate leakage current of 400 μA/mm are obtained. The measured transconductance is 145 mS/mm with the current gain cut-off frequency fT of 17 GHz and the maximum oscillation frequency f max of 33 GHz for a 1×100 um2 device. Consequently, based on the remarkable experimental results, the studied device shows a promise for high-power circuit applications.

UR - http://www.scopus.com/inward/record.url?scp=84877445363&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877445363&partnerID=8YFLogxK

U2 - 10.4271/1999-01-2494

DO - 10.4271/1999-01-2494

M3 - Paper

T2 - 34th Intersociety Energy Conversion Engineering Conference

Y2 - 2 August 1999 through 5 August 1999

ER -