A high-breakdown voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs heterojunction camel-gate transistor for power system applications

Wen-Chau Liu, W. L. Chang, J. Y. Chen, H. J. Pan, W. C. Wang, K. H. Yu, S. C. Feng

研究成果: Paper

摘要

A high-breakdown-voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs camel-gate field-effect transistor with the triple-step doped-channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V at a gate current of 1 mA/mm and a very high breakdown voltage of 40 V with the low gate leakage current of 400 μA/mm are obtained. The measured transconductance is 145 mS/mm with the current gain cut-off frequency fT of 17 GHz and the maximum oscillation frequency f max of 33 GHz for a 1×100 um2 device. Consequently, based on the remarkable experimental results, the studied device shows a promise for high-power circuit applications.

原文English
DOIs
出版狀態Published - 1999 十二月 1
事件34th Intersociety Energy Conversion Engineering Conference - Vancouver, BC, Canada
持續時間: 1999 八月 21999 八月 5

Other

Other34th Intersociety Energy Conversion Engineering Conference
國家Canada
城市Vancouver, BC
期間99-08-0299-08-05

指紋

Electric breakdown
Heterojunctions
Transistors
Gates (transistor)
Cutoff frequency
Transconductance
Leakage currents
Networks (circuits)
Electric potential

All Science Journal Classification (ASJC) codes

  • Automotive Engineering
  • Safety, Risk, Reliability and Quality
  • Pollution
  • Industrial and Manufacturing Engineering

引用此文

Liu, W-C., Chang, W. L., Chen, J. Y., Pan, H. J., Wang, W. C., Yu, K. H., & Feng, S. C. (1999). A high-breakdown voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs heterojunction camel-gate transistor for power system applications. 論文發表於 34th Intersociety Energy Conversion Engineering Conference, Vancouver, BC, Canada. https://doi.org/10.4271/1999-01-2494
Liu, Wen-Chau ; Chang, W. L. ; Chen, J. Y. ; Pan, H. J. ; Wang, W. C. ; Yu, K. H. ; Feng, S. C. / A high-breakdown voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs heterojunction camel-gate transistor for power system applications. 論文發表於 34th Intersociety Energy Conversion Engineering Conference, Vancouver, BC, Canada.
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abstract = "A high-breakdown-voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs camel-gate field-effect transistor with the triple-step doped-channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V at a gate current of 1 mA/mm and a very high breakdown voltage of 40 V with the low gate leakage current of 400 μA/mm are obtained. The measured transconductance is 145 mS/mm with the current gain cut-off frequency fT of 17 GHz and the maximum oscillation frequency f max of 33 GHz for a 1×100 um2 device. Consequently, based on the remarkable experimental results, the studied device shows a promise for high-power circuit applications.",
author = "Wen-Chau Liu and Chang, {W. L.} and Chen, {J. Y.} and Pan, {H. J.} and Wang, {W. C.} and Yu, {K. H.} and Feng, {S. C.}",
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note = "34th Intersociety Energy Conversion Engineering Conference ; Conference date: 02-08-1999 Through 05-08-1999",

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Liu, W-C, Chang, WL, Chen, JY, Pan, HJ, Wang, WC, Yu, KH & Feng, SC 1999, 'A high-breakdown voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs heterojunction camel-gate transistor for power system applications', 論文發表於 34th Intersociety Energy Conversion Engineering Conference, Vancouver, BC, Canada, 99-08-02 - 99-08-05. https://doi.org/10.4271/1999-01-2494

A high-breakdown voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs heterojunction camel-gate transistor for power system applications. / Liu, Wen-Chau; Chang, W. L.; Chen, J. Y.; Pan, H. J.; Wang, W. C.; Yu, K. H.; Feng, S. C.

1999. 論文發表於 34th Intersociety Energy Conversion Engineering Conference, Vancouver, BC, Canada.

研究成果: Paper

TY - CONF

T1 - A high-breakdown voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs heterojunction camel-gate transistor for power system applications

AU - Liu, Wen-Chau

AU - Chang, W. L.

AU - Chen, J. Y.

AU - Pan, H. J.

AU - Wang, W. C.

AU - Yu, K. H.

AU - Feng, S. C.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - A high-breakdown-voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs camel-gate field-effect transistor with the triple-step doped-channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V at a gate current of 1 mA/mm and a very high breakdown voltage of 40 V with the low gate leakage current of 400 μA/mm are obtained. The measured transconductance is 145 mS/mm with the current gain cut-off frequency fT of 17 GHz and the maximum oscillation frequency f max of 33 GHz for a 1×100 um2 device. Consequently, based on the remarkable experimental results, the studied device shows a promise for high-power circuit applications.

AB - A high-breakdown-voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs camel-gate field-effect transistor with the triple-step doped-channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V at a gate current of 1 mA/mm and a very high breakdown voltage of 40 V with the low gate leakage current of 400 μA/mm are obtained. The measured transconductance is 145 mS/mm with the current gain cut-off frequency fT of 17 GHz and the maximum oscillation frequency f max of 33 GHz for a 1×100 um2 device. Consequently, based on the remarkable experimental results, the studied device shows a promise for high-power circuit applications.

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Liu W-C, Chang WL, Chen JY, Pan HJ, Wang WC, Yu KH 等. A high-breakdown voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs heterojunction camel-gate transistor for power system applications. 1999. 論文發表於 34th Intersociety Energy Conversion Engineering Conference, Vancouver, BC, Canada. https://doi.org/10.4271/1999-01-2494