A high-breakdown voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs heterojunction camel-gate transistor for power system applications

Wen-Chau Liu, W. L. Chang, J. Y. Chen, H. J. Pan, W. C. Wang, K. H. Yu, S. C. Feng

研究成果: Paper

摘要

A high-breakdown-voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs camel-gate field-effect transistor with the triple-step doped-channel has been successfully fabricated and demonstrated. Experimentally, the high gate turn-on voltage of 1.6 V at a gate current of 1 mA/mm and a very high breakdown voltage of 40 V with the low gate leakage current of 400 μA/mm are obtained. The measured transconductance is 145 mS/mm with the current gain cut-off frequency fT of 17 GHz and the maximum oscillation frequency f max of 33 GHz for a 1×100 um2 device. Consequently, based on the remarkable experimental results, the studied device shows a promise for high-power circuit applications.

原文English
DOIs
出版狀態Published - 1999 十二月 1
事件34th Intersociety Energy Conversion Engineering Conference - Vancouver, BC, Canada
持續時間: 1999 八月 21999 八月 5

Other

Other34th Intersociety Energy Conversion Engineering Conference
國家Canada
城市Vancouver, BC
期間99-08-0299-08-05

    指紋

All Science Journal Classification (ASJC) codes

  • Automotive Engineering
  • Safety, Risk, Reliability and Quality
  • Pollution
  • Industrial and Manufacturing Engineering

引用此

Liu, W-C., Chang, W. L., Chen, J. Y., Pan, H. J., Wang, W. C., Yu, K. H., & Feng, S. C. (1999). A high-breakdown voltage n+-GaAs/δ (p+)-GaInP/ n-GaAs heterojunction camel-gate transistor for power system applications. 論文發表於 34th Intersociety Energy Conversion Engineering Conference, Vancouver, BC, Canada. https://doi.org/10.4271/1999-01-2494