A high-density SRAM design technique using silicon nanowire FETs

Yi Bo Liao, Meng Hsueh Chiang, Keunwoo Kim, Wei Chou Hsu

研究成果: Conference contribution

3 引文 斯高帕斯(Scopus)

摘要

A new all-single-wire 6T-SRAM technique using junctionless nanowire FETs is proposed. The quantization-free design shows a great advantage in Si-nanowire-based SRAM cells. TCAD-simulated results show that the proposed single-wire SRAM can improve Read stability, and it can save about one third of the area as compared with multi-wire design while it is compatible with conventional processing.

原文English
主出版物標題2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
出版狀態Published - 2011 十二月 1
事件2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
持續時間: 2011 十二月 72011 十二月 9

出版系列

名字2011 International Semiconductor Device Research Symposium, ISDRS 2011

Other

Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
國家United States
城市College Park, MD
期間11-12-0711-12-09

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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