A high gain and low supply voltage LNA for the direct conversion application with 4-KV HBM ESP protection in 90-nm RF CMOS

Chieh Pin Chang, Jian An Hou, Jionguang Su, Chih Wei Chen, Tsyr Shyang Liou, Shyh Chyi Wong, Yeong Her Wang

研究成果: Article同行評審

22 引文 斯高帕斯(Scopus)

摘要

A 2.4-GHz low noise amplifier (LNA) for the direct conversion application with high power gain, low supply voltage and ±4 KV human body model (HBM) electrostatic discharge (ESD) protection level implemented by a 90-nm RF CMOS technology is demonstrated. At 12.9 mA of current consumption with a supply voltage of 1.0 V, the LNA delivers a power gain of 21.9 dB and the noise figure (NF) of 3.2 dB, while maintaining the input and output return losses below -11 dB and -18.3 dB, respectively. The power gain and NF are only 0.2 dB lower and 0.64 dB higher than those of LNA without ESD protection.

原文English
文章編號1717520
頁(從 - 到)612-614
頁數3
期刊IEEE Microwave and Wireless Components Letters
16
發行號11
DOIs
出版狀態Published - 2006 十一月

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 電氣與電子工程

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