@article{06cd2b8ced344667b061034abe3575ac,
title = "A high gain and low supply voltage LNA for the direct conversion application with 4-KV HBM ESP protection in 90-nm RF CMOS",
abstract = "A 2.4-GHz low noise amplifier (LNA) for the direct conversion application with high power gain, low supply voltage and ±4 KV human body model (HBM) electrostatic discharge (ESD) protection level implemented by a 90-nm RF CMOS technology is demonstrated. At 12.9 mA of current consumption with a supply voltage of 1.0 V, the LNA delivers a power gain of 21.9 dB and the noise figure (NF) of 3.2 dB, while maintaining the input and output return losses below -11 dB and -18.3 dB, respectively. The power gain and NF are only 0.2 dB lower and 0.64 dB higher than those of LNA without ESD protection.",
author = "Chang, {Chieh Pin} and Hou, {Jian An} and Jionguang Su and Chen, {Chih Wei} and Liou, {Tsyr Shyang} and Wong, {Shyh Chyi} and Wang, {Yeong Her}",
note = "Funding Information: Manuscript received April 6, 2006; revised June 15, 2006. This work was supported in part by the National Science Council of Taiwan, R.O.C., under Contract NSC94-2215-E-006-001. C.-P. Chang, J.-A. Hou, and Y.-H. Wang are with the Institute of Microelectronics, Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng-Kung University, Tainan 701, Taiwan, R.O.C. (e-mail: yhw@eemail.ncku.edu.tw; yhw@eembox.ncku.edu.tw). J. Su, C.-W. Chen, T.-S. Liou, and S.-C. Wong are with RichWave Technology Corporation, Taipei 114, Taiwan, R.O.C. Color versions of Figs. 2 and 4–6 are available online at http://ieeexplore. ieee.org. Digital Object Identifier 10.1109/LMWC.2006.884911",
year = "2006",
month = nov,
doi = "10.1109/LMWC.2006.884911",
language = "English",
volume = "16",
pages = "612--614",
journal = "IEEE Microwave and Wireless Components Letters",
issn = "1531-1309",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",
}