A high-isolation high-linearity 24-GHz CMOS T/R switch in the 0.18-μm CMOS process

C. Y. Ou, C. Y. Hsu, H. R. Lin, H. R. Chuang

研究成果: Conference contribution

12 引文 斯高帕斯(Scopus)

摘要

A 24-GHz single-pole double-throw (SPDT) transmit/receive switch fabricated in the 0.18-μm CMOS process is presented. The T/R switch is designed to improve the isolation and power handling capability by shunt inductor resonance and body-floating techniques. On-wafer measurement of the switch is performed. The 24-GHz switch exhibits the return losses at all ports of higher than 14 dB, insertion loss of 6 dB, isolation between transmitter and receiver of 32.2 dB, input 1-dB compression point (P1dB) of 21.5 dBm, and input third-order intercept point (IIP3) of 32.6 dBm. This is a successful demonstration of high isolation and high power handling capability CMOS T/R switch at 24 GHz.

原文English
主出版物標題European Microwave Week 2009, EuMW 2009
主出版物子標題Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
頁面250-253
頁數4
出版狀態Published - 2009 十二月 28
事件European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 - Rome, Italy
持續時間: 2009 九月 282009 十月 2

出版系列

名字European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Other

OtherEuropean Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
國家/地區Italy
城市Rome
期間09-09-2809-10-02

All Science Journal Classification (ASJC) codes

  • 電腦網路與通信
  • 硬體和架構
  • 電氣與電子工程

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