A High-Performance S-Doped GaAs/InxGa1_xAs Pseudomorphic High Electron Mobility Transistor Utilizing a Graded InxGaj_xAs Channel

Hir Ming Shieh, Wei Chou Hsu, Rong Tay Hsu, Chang Luen Wu, Tien Shou Wu

研究成果: Article

15 引文 (Scopus)

摘要

A new S-doped GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor utilizing a graded In composition InGaAs channel grown by low-pressure metalorganic chemical vapor deposition was demonstrated. This new structure revealed an extrinsic transconductance as high as 175 (245) mS/mm and a saturation current density as high as 500 (690) mA/mm at 300 (77) K for a gate length of 2 p.m. The maximum transconductance versus gate bias extended a broad and flat region of more than 2 V at 300 K. In addition, a low gate leakage current (< 10 uA at - 7 V) at 300 K was obtained.

原文English
頁(從 - 到)581-583
頁數3
期刊IEEE Electron Device Letters
14
發行號12
DOIs
出版狀態Published - 1993 十二月

指紋

Transconductance
High electron mobility transistors
Low pressure chemical vapor deposition
Metallorganic chemical vapor deposition
Leakage currents
Current density
Chemical analysis
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

Shieh, Hir Ming ; Hsu, Wei Chou ; Hsu, Rong Tay ; Wu, Chang Luen ; Wu, Tien Shou. / A High-Performance S-Doped GaAs/InxGa1_xAs Pseudomorphic High Electron Mobility Transistor Utilizing a Graded InxGaj_xAs Channel. 於: IEEE Electron Device Letters. 1993 ; 卷 14, 編號 12. 頁 581-583.
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abstract = "A new S-doped GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor utilizing a graded In composition InGaAs channel grown by low-pressure metalorganic chemical vapor deposition was demonstrated. This new structure revealed an extrinsic transconductance as high as 175 (245) mS/mm and a saturation current density as high as 500 (690) mA/mm at 300 (77) K for a gate length of 2 p.m. The maximum transconductance versus gate bias extended a broad and flat region of more than 2 V at 300 K. In addition, a low gate leakage current (< 10 uA at - 7 V) at 300 K was obtained.",
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A High-Performance S-Doped GaAs/InxGa1_xAs Pseudomorphic High Electron Mobility Transistor Utilizing a Graded InxGaj_xAs Channel. / Shieh, Hir Ming; Hsu, Wei Chou; Hsu, Rong Tay; Wu, Chang Luen; Wu, Tien Shou.

於: IEEE Electron Device Letters, 卷 14, 編號 12, 12.1993, p. 581-583.

研究成果: Article

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AB - A new S-doped GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor utilizing a graded In composition InGaAs channel grown by low-pressure metalorganic chemical vapor deposition was demonstrated. This new structure revealed an extrinsic transconductance as high as 175 (245) mS/mm and a saturation current density as high as 500 (690) mA/mm at 300 (77) K for a gate length of 2 p.m. The maximum transconductance versus gate bias extended a broad and flat region of more than 2 V at 300 K. In addition, a low gate leakage current (< 10 uA at - 7 V) at 300 K was obtained.

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