A high-responsivity GaN nanowire UV photodetector

W. Y. Weng, T. J. Hsueh, S. J. Chang, S. B. Wang, H. T. Hsueh, G. J. Huang

研究成果: Article同行評審

54 引文 斯高帕斯(Scopus)

摘要

The authors report the conversion of β-Ga2O3 nanowires (NWs) to GaN NWs through ammonification and the fabrication of a GaN NW photodetector (PD). Compared with conventional 2-D GaN PDs, it was found that we could achieve a 1000 times larger photocurrent from the GaN NW PD. It was also found that dynamic response of the GaN NW PD was stable and reproducible with an on/off current contrast ratio of around 1000. Furthermore, it was found that UV-to-visible rejection ratio observed from the GaN NW PD was also larger, as compared to conventional 2-D GaN PDs.

原文English
文章編號5560711
頁(從 - 到)996-1001
頁數6
期刊IEEE Journal on Selected Topics in Quantum Electronics
17
發行號4
DOIs
出版狀態Published - 2011 七月

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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