A high-responsivity GaN nanowire UV photodetector

W. Y. Weng; T. J. Hsueh; S. J. Chang; S. B. Wang; H. T. Hsueh; G. J. Huang

doi:10.1109/JSTQE.2010.2060715

A high-responsivity GaN nanowire UV photodetector

W. Y. Weng, T. J. Hsueh, S. J. Chang, S. B. Wang, H. T. Hsueh, G. J. Huang

研究成果: Article › 同行評審

54 引文斯高帕斯（Scopus）

摘要

The authors report the conversion of β-Ga₂O₃ nanowires (NWs) to GaN NWs through ammonification and the fabrication of a GaN NW photodetector (PD). Compared with conventional 2-D GaN PDs, it was found that we could achieve a 1000 times larger photocurrent from the GaN NW PD. It was also found that dynamic response of the GaN NW PD was stable and reproducible with an on/off current contrast ratio of around 1000. Furthermore, it was found that UV-to-visible rejection ratio observed from the GaN NW PD was also larger, as compared to conventional 2-D GaN PDs.

原文	English
文章編號	5560711
頁（從 - 到）	996-1001
頁數	6
期刊	IEEE Journal on Selected Topics in Quantum Electronics
卷	17
發行號	4
DOIs	https://doi.org/10.1109/JSTQE.2010.2060715
出版狀態	Published - 2011 七月

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/JSTQE.2010.2060715

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abstract = "The authors report the conversion of β-Ga2O3 nanowires (NWs) to GaN NWs through ammonification and the fabrication of a GaN NW photodetector (PD). Compared with conventional 2-D GaN PDs, it was found that we could achieve a 1000 times larger photocurrent from the GaN NW PD. It was also found that dynamic response of the GaN NW PD was stable and reproducible with an on/off current contrast ratio of around 1000. Furthermore, it was found that UV-to-visible rejection ratio observed from the GaN NW PD was also larger, as compared to conventional 2-D GaN PDs.",

author = "Weng, {W. Y.} and Hsueh, {T. J.} and Chang, {S. J.} and Wang, {S. B.} and Hsueh, {H. T.} and Huang, {G. J.}",

note = "Funding Information: Manuscript received May 4, 2010; revised June 20, 2010; accepted July 19, 2010. Date of publication September 2, 2010; date of current version August 5, 2011. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education, Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract 98-D0204-6.",

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AU - Weng, W. Y.

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AU - Chang, S. J.

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AU - Hsueh, H. T.

AU - Huang, G. J.

N1 - Funding Information: Manuscript received May 4, 2010; revised June 20, 2010; accepted July 19, 2010. Date of publication September 2, 2010; date of current version August 5, 2011. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education, Taiwan, and in part by the Bureau of Energy, Ministry of Economic Affairs of Taiwan under Contract 98-D0204-6.

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