A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)

Tsung Han Tsai, Huey Ing Chen, Kun Wei Lin, Tai You Chen, Chien Chang Huang, Kai Siang Hsu, Wen Chau Liu

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT) is fabricated and investigated. It is found that the applied gate-source voltage plays an important role in sensor performance. A highest sensing response is found to be 68% at the applied gate-source voltage of -0.6 V under exposing to a 1% H2/air. While the applied gate-source voltage is fixed at 0 V, the large magnitude of drain current variation of 1.8 mA is observed. However, the higher current variation accompanies higher power consumption. Thus, a trade-off between the sensor performance and power consumption should be considered.

原文English
頁(從 - 到)734-737
頁數4
期刊Microelectronics Reliability
50
發行號5
DOIs
出版狀態Published - 2010 五月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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