A hydrogen sensor based on InAlAs material with Pt catalytic thin film

Ching Wen Hung, Tsung Han Tsai, Yan Ying Tsai, Kun Wei Lin, Huey-Ing Chen, Tzu Pin Chen, Wen-Chau Liu

研究成果: Conference article同行評審

3 引文 斯高帕斯(Scopus)


On the basis of Pt/InAlAs metal-semiconductor (MS) structure, an interesting hydrogen sensor is fabricated. The Pt/InAlAs Schottky diode-type hydrogen sensor studied exhibits significant sensing performance including high relative sensitivity ratio (Sr) of about 2600%, widespread reverse voltage regime (0∼ - 5 V), and stable hydrogen sensing current density-voltage (J-V) curves. The calculated Schottky barrier height change and series resistance variation from the thermionic emission model and Norde method are 87.0 meV and 288 , respectively. The negative temperature dependence on Sr is due to the lower hydrogen coverage at higher temperature. Yet, the positive temperature dependence on Δ I is caused by thermal effect. Based on the excellent integration compatibility with InP-based electronic devices, the device studied does provide potential for high-performance sensor array applications.

頁(從 - 到)345-348
期刊Physica Scripta T
出版狀態Published - 2007 12月 1
事件2nd International Symposium on Functional Materials - Hangzhou, China
持續時間: 2007 5月 162007 5月 19

All Science Journal Classification (ASJC) codes

  • 原子與分子物理與光學
  • 數學物理學
  • 凝聚態物理學


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