A hydrogen sensor based on InAlAs material with Pt catalytic thin film

Ching Wen Hung; Tsung Han Tsai; Yan Ying Tsai; Kun Wei Lin; Huey-Ing Chen; Tzu Pin Chen; Wen-Chau Liu

doi:10.1088/0031-8949/2007/T129/076

A hydrogen sensor based on InAlAs material with Pt catalytic thin film

Ching Wen Hung, Tsung Han Tsai, Yan Ying Tsai, Kun Wei Lin, Huey-Ing Chen, Tzu Pin Chen, Wen-Chau Liu

研究成果: Conference article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

On the basis of Pt/InAlAs metal-semiconductor (MS) structure, an interesting hydrogen sensor is fabricated. The Pt/InAlAs Schottky diode-type hydrogen sensor studied exhibits significant sensing performance including high relative sensitivity ratio (S_r) of about 2600%, widespread reverse voltage regime (0∼ - 5 V), and stable hydrogen sensing current density-voltage (J-V) curves. The calculated Schottky barrier height change and series resistance variation from the thermionic emission model and Norde method are 87.0 meV and 288 , respectively. The negative temperature dependence on S_r is due to the lower hydrogen coverage at higher temperature. Yet, the positive temperature dependence on Δ I is caused by thermal effect. Based on the excellent integration compatibility with InP-based electronic devices, the device studied does provide potential for high-performance sensor array applications.

原文	English
頁（從 - 到）	345-348
頁數	4
期刊	Physica Scripta T
卷	T129
DOIs	https://doi.org/10.1088/0031-8949/2007/T129/076
出版狀態	Published - 2007 12月 1
事件	2nd International Symposium on Functional Materials - Hangzhou, China 持續時間: 2007 5月 16 → 2007 5月 19

All Science Journal Classification (ASJC) codes

原子與分子物理與光學
數學物理學
凝聚態物理學

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title = "A hydrogen sensor based on InAlAs material with Pt catalytic thin film",

abstract = "On the basis of Pt/InAlAs metal-semiconductor (MS) structure, an interesting hydrogen sensor is fabricated. The Pt/InAlAs Schottky diode-type hydrogen sensor studied exhibits significant sensing performance including high relative sensitivity ratio (Sr) of about 2600%, widespread reverse voltage regime (0∼ - 5 V), and stable hydrogen sensing current density-voltage (J-V) curves. The calculated Schottky barrier height change and series resistance variation from the thermionic emission model and Norde method are 87.0 meV and 288 , respectively. The negative temperature dependence on Sr is due to the lower hydrogen coverage at higher temperature. Yet, the positive temperature dependence on Δ I is caused by thermal effect. Based on the excellent integration compatibility with InP-based electronic devices, the device studied does provide potential for high-performance sensor array applications.",

author = "Hung, {Ching Wen} and Tsai, {Tsung Han} and Tsai, {Yan Ying} and Lin, {Kun Wei} and Huey-Ing Chen and Chen, {Tzu Pin} and Wen-Chau Liu",

year = "2007",

month = dec,

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doi = "10.1088/0031-8949/2007/T129/076",

language = "English",

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TY - JOUR

T1 - A hydrogen sensor based on InAlAs material with Pt catalytic thin film

AU - Hung, Ching Wen

AU - Tsai, Tsung Han

AU - Tsai, Yan Ying

AU - Lin, Kun Wei

AU - Chen, Huey-Ing

AU - Chen, Tzu Pin

AU - Liu, Wen-Chau

PY - 2007/12/1

Y1 - 2007/12/1

N2 - On the basis of Pt/InAlAs metal-semiconductor (MS) structure, an interesting hydrogen sensor is fabricated. The Pt/InAlAs Schottky diode-type hydrogen sensor studied exhibits significant sensing performance including high relative sensitivity ratio (Sr) of about 2600%, widespread reverse voltage regime (0∼ - 5 V), and stable hydrogen sensing current density-voltage (J-V) curves. The calculated Schottky barrier height change and series resistance variation from the thermionic emission model and Norde method are 87.0 meV and 288 , respectively. The negative temperature dependence on Sr is due to the lower hydrogen coverage at higher temperature. Yet, the positive temperature dependence on Δ I is caused by thermal effect. Based on the excellent integration compatibility with InP-based electronic devices, the device studied does provide potential for high-performance sensor array applications.

AB - On the basis of Pt/InAlAs metal-semiconductor (MS) structure, an interesting hydrogen sensor is fabricated. The Pt/InAlAs Schottky diode-type hydrogen sensor studied exhibits significant sensing performance including high relative sensitivity ratio (Sr) of about 2600%, widespread reverse voltage regime (0∼ - 5 V), and stable hydrogen sensing current density-voltage (J-V) curves. The calculated Schottky barrier height change and series resistance variation from the thermionic emission model and Norde method are 87.0 meV and 288 , respectively. The negative temperature dependence on Sr is due to the lower hydrogen coverage at higher temperature. Yet, the positive temperature dependence on Δ I is caused by thermal effect. Based on the excellent integration compatibility with InP-based electronic devices, the device studied does provide potential for high-performance sensor array applications.

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U2 - 10.1088/0031-8949/2007/T129/076

DO - 10.1088/0031-8949/2007/T129/076

M3 - Conference article

AN - SCOPUS:39549121455

VL - T129

SP - 345

EP - 348

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

T2 - 2nd International Symposium on Functional Materials

Y2 - 16 May 2007 through 19 May 2007

ER -

A hydrogen sensor based on InAlAs material with Pt catalytic thin film

摘要

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