摘要
We report the fabrication of a lateral ZnO nanowire UV photodetector on a glass substrate using tungsten as the growth barrier to suppress the vertical growth of the ZnO nanowires. Upon UV illumination, the detector current increased by more than 1 order of magnitude. Furthermore, the noise equivalent power and the normalized detectivity D* of the fabricated lateral ZnO nanowire photodetector were 7.89× 10-11 W and 1.9× 108 cm Hz0.5 W-1, respectively.
原文 | English |
---|---|
頁(從 - 到) | K30-K33 |
期刊 | Journal of the Electrochemical Society |
卷 | 157 |
發行號 | 2 |
DOIs | |
出版狀態 | Published - 2010 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 可再生能源、永續發展與環境
- 表面、塗料和薄膜
- 電化學
- 材料化學