We report the fabrication of a lateral ZnO nanowire UV photodetector on a glass substrate using tungsten as the growth barrier to suppress the vertical growth of the ZnO nanowires. Upon UV illumination, the detector current increased by more than 1 order of magnitude. Furthermore, the noise equivalent power and the normalized detectivity D* of the fabricated lateral ZnO nanowire photodetector were 7.89× 10-11 W and 1.9× 108 cm Hz0.5 W-1, respectively.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry