A lateral ZnO nanowire UV photodetector prepared on a ZnO:Ga/glass template

Chien Yuan Lu; Sheng Po Chang; Shoou Jinn Chang; Ting Jen Hsueh; Cheng Liang Hsu; Yu Zung Chiou; I. Cherng Chen

doi:10.1088/0268-1242/24/7/075005

A lateral ZnO nanowire UV photodetector prepared on a ZnO:Ga/glass template

Chien Yuan Lu, Sheng Po Chang, Shoou Jinn Chang, Ting Jen Hsueh, Cheng Liang Hsu, Yu Zung Chiou, I. Cherng Chen

研究成果: Article › 同行評審

23 引文斯高帕斯（Scopus）

摘要

We report the lateral growth of ZnO nanowires on a ZnO:Ga/glass template. By reducing the oxygen flow ratio, it was found that we could change the growth direction of ZnO nanowires from vertical to lateral. ZnO nanowire-based photodetectors were also fabricated using the laterally grown ZnO nanowires. It was found that the detector current increased by more than 12 times upon ultraviolet illumination. It was also found that the corresponding time constant of our lateral ZnO nanowire photodetector was around 452 ms.

原文	English
文章編號	075005
期刊	Semiconductor Science and Technology
卷	24
發行號	7
DOIs	https://doi.org/10.1088/0268-1242/24/7/075005
出版狀態	Published - 2009

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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abstract = "We report the lateral growth of ZnO nanowires on a ZnO:Ga/glass template. By reducing the oxygen flow ratio, it was found that we could change the growth direction of ZnO nanowires from vertical to lateral. ZnO nanowire-based photodetectors were also fabricated using the laterally grown ZnO nanowires. It was found that the detector current increased by more than 12 times upon ultraviolet illumination. It was also found that the corresponding time constant of our lateral ZnO nanowire photodetector was around 452 ms.",

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AU - Lu, Chien Yuan

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

AU - Hsueh, Ting Jen

AU - Hsu, Cheng Liang

AU - Chiou, Yu Zung

AU - Chen, I. Cherng

PY - 2009

Y1 - 2009

N2 - We report the lateral growth of ZnO nanowires on a ZnO:Ga/glass template. By reducing the oxygen flow ratio, it was found that we could change the growth direction of ZnO nanowires from vertical to lateral. ZnO nanowire-based photodetectors were also fabricated using the laterally grown ZnO nanowires. It was found that the detector current increased by more than 12 times upon ultraviolet illumination. It was also found that the corresponding time constant of our lateral ZnO nanowire photodetector was around 452 ms.

AB - We report the lateral growth of ZnO nanowires on a ZnO:Ga/glass template. By reducing the oxygen flow ratio, it was found that we could change the growth direction of ZnO nanowires from vertical to lateral. ZnO nanowire-based photodetectors were also fabricated using the laterally grown ZnO nanowires. It was found that the detector current increased by more than 12 times upon ultraviolet illumination. It was also found that the corresponding time constant of our lateral ZnO nanowire photodetector was around 452 ms.

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VL - 24

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

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ER -

A lateral ZnO nanowire UV photodetector prepared on a ZnO:Ga/glass template

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