A low operating voltage ZnO thin film transistor using a high- κ HfLaO gate dielectric

N. C. Su, S. J. Wang, Albert Chin

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

This study demonstrates the feasibility of producing a ZnO thin film transistor (TFT) using hafnium-lanthanum-oxide (HfLaO) as the gate dielectric. By integrating high- κ HfLaO with an amorphous ZnO channel, the resulting HfLaO/ZnO TFTs display a low threshold voltage (VT) of 0.28 V, a small subthreshold swing (SS) of 0.26 V /dec, an acceptable mobility (μsat) of 3.5 cm2 /V s, and a good Ion / Ioff ratio of 1× 106. The SS heavily depends on the HfLaO/ZnO interface charges, a property which is related to the degree of crystallization of ZnO. The low VT and the small SS allow device voltage operation below 2 V for low power application.

原文English
頁(從 - 到)H8-H11
期刊Electrochemical and Solid-State Letters
13
發行號1
DOIs
出版狀態Published - 2009 11月 26

All Science Journal Classification (ASJC) codes

  • 化學工程 (全部)
  • 材料科學(全部)
  • 物理與理論化學
  • 電化學
  • 電氣與電子工程

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