A new gate driver composed of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is proposed. By turning off TFTs completely to suppress the leakage current and eliminating the unnecessary charge and discharge currents, the power consumption of the proposed gate driver is reduced. Simulation results indicate that the proposed gate driver can be operated successfully with depletion-mode a-IGZO TFTs and the power consumption is reduced by 18.9% of the previously reported result.
|頁（從 - 到）||1039-1042|
|期刊||Digest of Technical Papers - SID International Symposium|
|出版狀態||Published - 2014 6月|
All Science Journal Classification (ASJC) codes
- 工程 (全部)