A low-power gate driver using depletion-mode a-IGZO TFTs

Chih Lung Lin, Yuan Wei Du, Mao Hsun Cheng, Yuan Chih Chen, Chun Da Tu

研究成果: Conference article同行評審

5 引文 斯高帕斯(Scopus)

摘要

A new gate driver composed of amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is proposed. By turning off TFTs completely to suppress the leakage current and eliminating the unnecessary charge and discharge currents, the power consumption of the proposed gate driver is reduced. Simulation results indicate that the proposed gate driver can be operated successfully with depletion-mode a-IGZO TFTs and the power consumption is reduced by 18.9% of the previously reported result.

原文English
頁(從 - 到)1039-1042
頁數4
期刊Digest of Technical Papers - SID International Symposium
45
發行號1
DOIs
出版狀態Published - 2014 6月

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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