TY - JOUR
T1 - A Low Power Sub-GHz Wideband LNA Employing Current-Reuse and Device-Reuse Positive Shunt-Feedback Technique
AU - Cheng, Kuang Wei
AU - Chen, Wei Wei
AU - Yang, Shang De
N1 - Publisher Copyright:
© 2001-2012 IEEE.
PY - 2022/12/1
Y1 - 2022/12/1
N2 - This letter presents a low-power current-reuse and device-reuse low noise amplifier (LNA) for sub-GHz wideband applications. Based on the shunt-feedback common-gate (SFBCG) hybrid topology and the proposed current/device-reuse shunt-feedback (SFB) technique, g_m restriction is alleviated. Moreover, the degree of design freedom is added by coupling the output to the gate of the in-phase current source transistor to activate positive feedback without extra power burden, thereby achieving a higher gain and lower noise design. Implemented in 90-nm CMOS technology, this LNA prototype has an active area of 0.075 mm2. The measurement results show a peak gain of 21.3 dB with 3-dB bandwidth of 50-800 MHz, noise figure of 4.5 dB, third-order intercept point (IIP3) of -7.1 dBm, and power dissipation of 1.2 mW.
AB - This letter presents a low-power current-reuse and device-reuse low noise amplifier (LNA) for sub-GHz wideband applications. Based on the shunt-feedback common-gate (SFBCG) hybrid topology and the proposed current/device-reuse shunt-feedback (SFB) technique, g_m restriction is alleviated. Moreover, the degree of design freedom is added by coupling the output to the gate of the in-phase current source transistor to activate positive feedback without extra power burden, thereby achieving a higher gain and lower noise design. Implemented in 90-nm CMOS technology, this LNA prototype has an active area of 0.075 mm2. The measurement results show a peak gain of 21.3 dB with 3-dB bandwidth of 50-800 MHz, noise figure of 4.5 dB, third-order intercept point (IIP3) of -7.1 dBm, and power dissipation of 1.2 mW.
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U2 - 10.1109/LMWC.2022.3191116
DO - 10.1109/LMWC.2022.3191116
M3 - Article
AN - SCOPUS:85135223361
SN - 1531-1309
VL - 32
SP - 1455
EP - 1458
JO - IEEE Microwave and Wireless Components Letters
JF - IEEE Microwave and Wireless Components Letters
IS - 12
ER -