A low-temperature wafer bonding technique using patternable materials

C. T. Pan, H. Yang, Sheng-Chih Shen, M. C. Chou, H. P. Chou

研究成果: Article同行評審

124 引文 斯高帕斯(Scopus)

摘要

In this paper we present a silicon wafer bonding technique for 3D microstructures using MEMS process technology. Photo-definable material with patternable characteristics served as the bonding layer between the silicon wafers. A bonding process was developed and several types of photo-definable material were tested for bonding strength and pattern spatial resolution. The results indicated that SU-8 is the best material with a bonding strength of up to 213 kg cm-2 (20.6 MPa), and a spatial resolution of 10 μm, at a layer thickness of up to 100 μm. The low-temperature bonding technique that is presented is particularly suitable for microstructure and microelectronics integration involved in MEMS packaging.

原文English
頁(從 - 到)611-615
頁數5
期刊Journal of Micromechanics and Microengineering
12
發行號5
DOIs
出版狀態Published - 2002 九月 1

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 材料力學
  • 機械工業
  • 電氣與電子工程

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