A new automatic parameter extraction method for modeling of silicon spiral inductors is presented. The concepts on self-resonance frequency (fsr) and quality factor of a spiral inductor are utilized to develop the concise extraction procedures. In the mean time, the presented extraction procedures are programmed as a macro to execute all the extractions automatically and shorten the extraction time effectively. Without any additional optimization or curve fitting, almost all the patterns of S-parameters between the measured and the simulation of extracted data implemented with the extraction macro are less than 5%. The programmed extraction macro makes it fast and accurate to extract and characterize the behaviors of silicon-based spiral inductors with different structures and substrate resistivities. It provides a concrete foundation for commercial silicon radiofrequency (RF) circuit design to realizing on-chip silicon RF integrated circuits. Furthermore, the directly extracted equivalent model parameters, without any optimization, also provide a rule to fairly, effectively and physically judge the performance of a spiral inductor.
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