摘要
A new automatic parameter extraction method for modeling of silicon spiral inductors is presented. The concepts on self-resonance frequency (fsr) and quality factor of a spiral inductor are utilized to develop the concise extraction procedures. In the mean time, the presented extraction procedures are programmed as a macro to execute all the extractions automatically and shorten the extraction time effectively. Without any additional optimization or curve fitting, almost all the patterns of S-parameters between the measured and the simulation of extracted data implemented with the extraction macro are less than 5%. The programmed extraction macro makes it fast and accurate to extract and characterize the behaviors of silicon-based spiral inductors with different structures and substrate resistivities. It provides a concrete foundation for commercial silicon radiofrequency (RF) circuit design to realizing on-chip silicon RF integrated circuits. Furthermore, the directly extracted equivalent model parameters, without any optimization, also provide a rule to fairly, effectively and physically judge the performance of a spiral inductor.
原文 | English |
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頁(從 - 到) | 759-767 |
頁數 | 9 |
期刊 | Solid-State Electronics |
卷 | 46 |
發行號 | 5 |
DOIs | |
出版狀態 | Published - 2002 5月 |
All Science Journal Classification (ASJC) codes
- 電子、光磁材料
- 凝聚態物理學
- 電氣與電子工程
- 材料化學