A material removal rate model considering interracial micro-contact wear behavior for chemical mechanical polishing

Yeau-Ren Jeng, Pay Y. Huang

研究成果: Conference contribution

摘要

Chemical Mechanical Polishing (CMP) is a highly effective technique for planarizing wafer surfaces. Consequently, considerable research has been conducted into its associated material removal mechanisms. The present study proposes a CMP material removal rate model based upon a micro-contact model which considers the effects of the abrasive particles located between the polishing interfaces, thereby the down force applied on the wafer is carried both by the deformation of the polishing pad asperities and by the penetration of the abrasive particles. It is shown that the current theoretical results are in good agreement with the experimental data published previously. In addition to such operational parameters as the applied down force, the present study also considers consumable parameters rarely investigated by previous models based on the Preston equation, including wafer surface hardness, slurry particle size, and slurry concentration. This study also provides physical insights into the interfacial phenomena not discussed by previous models, which ignored the effects of abrasive particles between the polishing interfaces during force balancing.

原文English
主出版物標題Proceedings of the World Tribology Congress III - 2005
頁面239-240
頁數2
出版狀態Published - 2005 12月 1
事件2005 World Tribology Congress III - Washington, D.C., United States
持續時間: 2005 9月 122005 9月 16

出版系列

名字Proceedings of the World Tribology Congress III - 2005

Other

Other2005 World Tribology Congress III
國家/地區United States
城市Washington, D.C.
期間05-09-1205-09-16

All Science Journal Classification (ASJC) codes

  • 一般工程

指紋

深入研究「A material removal rate model considering interracial micro-contact wear behavior for chemical mechanical polishing」主題。共同形成了獨特的指紋。

引用此