TY - JOUR
T1 - A metal-embedded photo-mask for contact photolithography with application on patterned sapphire substrate
AU - Yan, Jhih Nan
AU - Chang, Cho Wei
AU - Lee, Yung Chun
N1 - Funding Information:
This work was funded by the National Science Council (NSC) of Taiwan, Republic of China (ROC) under Grant NSC 101-2120-M-006-004-CC1.
PY - 2014/6/25
Y1 - 2014/6/25
N2 - This paper describes the fabrication processes of a new type of photo-masks, named metal-embedded photo-masks, which can be used in standard contact-type photolithography. This metal-embedded photo-mask is prepared by metal contact printing method and can easily achieve a line-width at sub-micrometer scales. The fabrication processes can be easily implemented and the cost of making a high-resolution photo-mask is significantly reduced. Both 2″ and 4″ quartz photo-masks with a line-width of 1 μm and 0.5 μm are successfully fabricated. Experimental patterning of photo-resist layers using these metal-embedded photo-masks are carried out. Applications of these photo-masks on fabricating high-quality patterned sapphire substrates (PSSs) used in light-emitting diode (LED) industry are experimentally demonstrated.
AB - This paper describes the fabrication processes of a new type of photo-masks, named metal-embedded photo-masks, which can be used in standard contact-type photolithography. This metal-embedded photo-mask is prepared by metal contact printing method and can easily achieve a line-width at sub-micrometer scales. The fabrication processes can be easily implemented and the cost of making a high-resolution photo-mask is significantly reduced. Both 2″ and 4″ quartz photo-masks with a line-width of 1 μm and 0.5 μm are successfully fabricated. Experimental patterning of photo-resist layers using these metal-embedded photo-masks are carried out. Applications of these photo-masks on fabricating high-quality patterned sapphire substrates (PSSs) used in light-emitting diode (LED) industry are experimentally demonstrated.
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U2 - 10.1016/j.mee.2014.03.008
DO - 10.1016/j.mee.2014.03.008
M3 - Article
AN - SCOPUS:84898657397
VL - 122
SP - 20
EP - 24
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -