This paper describes the fabrication processes of a new type of photo-masks, named metal-embedded photo-masks, which can be used in standard contact-type photolithography. This metal-embedded photo-mask is prepared by metal contact printing method and can easily achieve a line-width at sub-micrometer scales. The fabrication processes can be easily implemented and the cost of making a high-resolution photo-mask is significantly reduced. Both 2″ and 4″ quartz photo-masks with a line-width of 1 μm and 0.5 μm are successfully fabricated. Experimental patterning of photo-resist layers using these metal-embedded photo-masks are carried out. Applications of these photo-masks on fabricating high-quality patterned sapphire substrates (PSSs) used in light-emitting diode (LED) industry are experimentally demonstrated.
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