A method integrating optimal algorithm and FEM on CMOS residual stress

W. C. Chuang, David T.W. Lin, Y. C. Hu, H. L. Lee, C. H. Cheng, P. Z. Chang, N. B. Quyen

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

Residual stress in MEMS is of inherent importance in various respects. This study proposes a specific method using ANSYS including the birth and death method and combined with the optimal method (SCGM) to reduce the residual stresses during the CMOS fabrication process. The suitable cooling temperature for decreasing the residual stress is proposed and available. It demonstrates that the suitable parameter on the fabrication can reduce the residual stress in MEMS devices without any extra manufacturing process or external apparatus. The proposed method can expand to simulate the realistic MEMS model effectively.

原文English
頁(從 - 到)123-128
頁數6
期刊Journal of Mechanics
30
發行號2
DOIs
出版狀態Published - 2014 4月

All Science Journal Classification (ASJC) codes

  • 凝聚態物理學
  • 機械工業
  • 應用數學

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