A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors

William G. Vandenberghe, Anne S. Verhulst, Kuo Hsing Kao, Kristin De Meyer, Bart Sorée, Wim Magnus, Guido Groeseneken

研究成果: Article同行評審

31 引文 斯高帕斯(Scopus)

摘要

We develop a model for the tunnel field-effect transistor (TFET) based on the Wentzel-Kramer-Brillouin approximation which improves over existing semi-classical models employing generation rates. We hereby introduce the concept of a characteristic tunneling length in direct semiconductors. Based on the model, we show that a limited density of states results in an optimal doping concentration as well as an optimal material's band gap to obtain the highest TFET on-current at a given supply voltage. The observed optimal-doping trend is confirmed by 2-dimensional quantum-mechanical simulations for silicon and germanium.

原文English
文章編號193509
期刊Applied Physics Letters
100
發行號19
DOIs
出版狀態Published - 2012 五月 7

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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