摘要
We develop a model for the tunnel field-effect transistor (TFET) based on the Wentzel-Kramer-Brillouin approximation which improves over existing semi-classical models employing generation rates. We hereby introduce the concept of a characteristic tunneling length in direct semiconductors. Based on the model, we show that a limited density of states results in an optimal doping concentration as well as an optimal material's band gap to obtain the highest TFET on-current at a given supply voltage. The observed optimal-doping trend is confirmed by 2-dimensional quantum-mechanical simulations for silicon and germanium.
原文 | English |
---|---|
文章編號 | 193509 |
期刊 | Applied Physics Letters |
卷 | 100 |
發行號 | 19 |
DOIs | |
出版狀態 | Published - 2012 5月 7 |
All Science Journal Classification (ASJC) codes
- 物理與天文學(雜項)