A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors

William G. Vandenberghe; Anne S. Verhulst; Kuo Hsing Kao; Kristin De Meyer; Bart Sorée; Wim Magnus; Guido Groeseneken

doi:10.1063/1.4714544

A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors

William G. Vandenberghe, Anne S. Verhulst, Kuo Hsing Kao, Kristin De Meyer, Bart Sorée, Wim Magnus, Guido Groeseneken

研究成果: Article › 同行評審

32 引文斯高帕斯（Scopus）

摘要

We develop a model for the tunnel field-effect transistor (TFET) based on the Wentzel-Kramer-Brillouin approximation which improves over existing semi-classical models employing generation rates. We hereby introduce the concept of a characteristic tunneling length in direct semiconductors. Based on the model, we show that a limited density of states results in an optimal doping concentration as well as an optimal material's band gap to obtain the highest TFET on-current at a given supply voltage. The observed optimal-doping trend is confirmed by 2-dimensional quantum-mechanical simulations for silicon and germanium.

原文	English
文章編號	193509
期刊	Applied Physics Letters
卷	100
發行號	19
DOIs	https://doi.org/10.1063/1.4714544
出版狀態	Published - 2012 5月 7

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.4714544

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abstract = "We develop a model for the tunnel field-effect transistor (TFET) based on the Wentzel-Kramer-Brillouin approximation which improves over existing semi-classical models employing generation rates. We hereby introduce the concept of a characteristic tunneling length in direct semiconductors. Based on the model, we show that a limited density of states results in an optimal doping concentration as well as an optimal material's band gap to obtain the highest TFET on-current at a given supply voltage. The observed optimal-doping trend is confirmed by 2-dimensional quantum-mechanical simulations for silicon and germanium.",

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note = "Funding Information: William Vandenberghe gratefully acknowledges the support of a Ph.D. stipend from the Institute for the Promotion of Innovation through Science and Technology in Flanders (IWT-Vlaanderen). This work was supported by IMEC{\textquoteright}s Industrial Affiliation Program. ",

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AU - Magnus, Wim

AU - Groeseneken, Guido

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A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors

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