A molecular-rotor device for nonvolatile high-density memory applications

Mei Xue, Sanaz Kabehie, Adam Z. Stieg, Ekaterina Tkatchouk, Diego Benitez, William A. Goddard, Jeffrey I. Zink, Kang L. Wang

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

A novel memory device based on an electrically driven molecular rotor was fabricated and demonstrated to have bistable switching effects. The device showed an on/off ratio of approximately 104, a read window of about 2.5 V, and retention performance of greater than 104 s. The analysis of the device IV characteristics suggests the source of the observed switching effects to be the redox-induced ligand rotation around the copper metal center, which is consistent with the observed temperature dependence of the switching behavior. This organic monolayer device holds a potential for nonvolatile high-density memory applications due to its scalability and reduced cost.

原文English
文章編號5512600
頁(從 - 到)1047-1049
頁數3
期刊IEEE Electron Device Letters
31
發行號9
DOIs
出版狀態Published - 2010 九月

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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