TY - JOUR
T1 - A Multichannel Injection-Locked OOK Transmitter With Current Mode Edge-Combining Power Amplifier
AU - Chang, Sheng Kai
AU - Lin, Zhi Wei
AU - Cheng, Kuang Wei
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2024
Y1 - 2024
N2 - This letter introduces an ultralow-power ON-OFF keying (OOK) wireless transmitter incorporating innovative multiphase injection locking and frequency multiplication techniques. The transmitter leverages a current mode class-D edge-combining power amplifier, ensuring high-energy efficiency in frequency multiplication to generate the carrier frequency. With a primary focus on facilitating multichannel support for Internet of Things (IoT) applications, the prototype incorporates a low-frequency phase-rotation-based frequency synthesizer. To mitigate the quantization noise in Δ Σ modulator of the synthesizer, the design combines an N-path filter and injection-locked ring oscillators to effectively filter out the shaped far-out phase noise. The prototype, fabricated in TSMC 90-nm CMOS, achieves an output power of -6.9 dBm with a power consumption of 890μ W at a 0.75-V supply voltage. It supports data rates of up to 40 Mb/s under OOK modulation, resulting in an energy efficiency of 22 pJ/bit and a global efficiency of 23%, showcasing its effectiveness in balancing performance and power consumption.
AB - This letter introduces an ultralow-power ON-OFF keying (OOK) wireless transmitter incorporating innovative multiphase injection locking and frequency multiplication techniques. The transmitter leverages a current mode class-D edge-combining power amplifier, ensuring high-energy efficiency in frequency multiplication to generate the carrier frequency. With a primary focus on facilitating multichannel support for Internet of Things (IoT) applications, the prototype incorporates a low-frequency phase-rotation-based frequency synthesizer. To mitigate the quantization noise in Δ Σ modulator of the synthesizer, the design combines an N-path filter and injection-locked ring oscillators to effectively filter out the shaped far-out phase noise. The prototype, fabricated in TSMC 90-nm CMOS, achieves an output power of -6.9 dBm with a power consumption of 890μ W at a 0.75-V supply voltage. It supports data rates of up to 40 Mb/s under OOK modulation, resulting in an energy efficiency of 22 pJ/bit and a global efficiency of 23%, showcasing its effectiveness in balancing performance and power consumption.
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U2 - 10.1109/LSSC.2024.3375329
DO - 10.1109/LSSC.2024.3375329
M3 - Article
AN - SCOPUS:85187982031
SN - 2573-9603
VL - 7
SP - 111
EP - 114
JO - IEEE Solid-State Circuits Letters
JF - IEEE Solid-State Circuits Letters
ER -