A New AC Technique for Accurate Determination of Channel Charge and Mobility in Very Thin Gate MOSFET's

Pei Ming Daniel Chow, Kang Lung Wang

研究成果: Article同行評審

59 引文 斯高帕斯(Scopus)

摘要

A new method is described for determining the channel charge and mobility of a MOS transistor as a function of gate bias from the ac admittance measurements. The admittance of the conduction channel of the MOSFET is derived from a transmission line model. The peaks of the G/ω versus ω curves are used to deduce gate-channel capacitance and mobility. The mobile carrier density and mobility in very thin-oxide MOSFET's can be measured more accurately using this ac method, since a zero lateral field and a uniform mobile charge distribution along the channel is maintained with zero drain-source voltage and interface trap effects are reduced by using high test frequencies. Measured data on the electron mobility versus gate voltage are presented for 90-A gate dielectric MOS transistors.

原文English
頁(從 - 到)1299-1304
頁數6
期刊IEEE Transactions on Electron Devices
33
發行號9
DOIs
出版狀態Published - 1986 九月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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