@inproceedings{7044dec380384ce1a283f98074a9bc8e,
title = "A new delta-doped quantum-well InGaAs-GaAs resonant-tunneling switching device",
abstract = "In this paper, a new switching device having a p-type delta-oped sheet, ¿(p+), in the center of an InGaAs-GaAs quantum well is presented. An N-shaped negative-differential-resistance (NDR) phenomenon resulting from the resonant tunneling effect through the miniband under a proper anode-to-cathode voltage is observed. From the experimental results, it is seen that the temperature plays an important role in the device performances.",
author = "Liu, {When Chau} and Guo, {Der Feng} and Laih, {Lih Wen} and Yih, {Shiuh Ren} and Liang, {Jing Tong} and Lyuu, {Gau Ming}",
year = "1994",
month = jan,
day = "1",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "551--554",
editor = "Peter Ashburn and Chris Hill",
booktitle = "European Solid-State Device Research Conference",
address = "United States",
note = "24th European Solid State Device Research Conference, ESSDERC 1994 ; Conference date: 11-09-1994 Through 15-09-1994",
}