TY - JOUR
T1 - A new dielectric material system of xLa(Mg1/2Ti1/2) O3-(1-x) CaTiO3 at microvave frequency
AU - Chen, Yuan Bin
AU - Huang, Cheng Liang
AU - Row, Che Win
PY - 2003
Y1 - 2003
N2 - The dielectric properties and the microstructures of xLa(Mg 1/2Ti1/2)O3-(1-x)CaTiO3 ceramics with B2O3 additions (0.25wt%) prepared with conventional solid-state route have been investigated. Doping with B2O3 (0.25wt%) can effectively promote the densification and the dielectric properties of xLa(Mg1/2Ti1/2)O3-(1-x)CaTiO 3 ceramics. It is found that La(Mg1/2Ti 1/2)O3-(1-x)CaTiO3 ceramics can be sintered at 1400°C due to the liquid phase effect of B2O3 addition observed by Scanning Electronic Microscopy. At 1425°C, 0.5La(Mg 1/2Ti1/2)O3-0.5CaTiO3 ceramics with 0.25 wt% B2O3 addition possesses a dielectric constant (εr) of 43, a Qxf value of 24470 (at 8GHz) and a temperature coefficients of resonant frequency (τf) of-8.94 ppm/°C. As an increasing the content of La(Mg1/2Ti1/2)O3, the highest Qxf value of 30824(GHz) could be achieved for X = 0.7.
AB - The dielectric properties and the microstructures of xLa(Mg 1/2Ti1/2)O3-(1-x)CaTiO3 ceramics with B2O3 additions (0.25wt%) prepared with conventional solid-state route have been investigated. Doping with B2O3 (0.25wt%) can effectively promote the densification and the dielectric properties of xLa(Mg1/2Ti1/2)O3-(1-x)CaTiO 3 ceramics. It is found that La(Mg1/2Ti 1/2)O3-(1-x)CaTiO3 ceramics can be sintered at 1400°C due to the liquid phase effect of B2O3 addition observed by Scanning Electronic Microscopy. At 1425°C, 0.5La(Mg 1/2Ti1/2)O3-0.5CaTiO3 ceramics with 0.25 wt% B2O3 addition possesses a dielectric constant (εr) of 43, a Qxf value of 24470 (at 8GHz) and a temperature coefficients of resonant frequency (τf) of-8.94 ppm/°C. As an increasing the content of La(Mg1/2Ti1/2)O3, the highest Qxf value of 30824(GHz) could be achieved for X = 0.7.
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U2 - 10.1557/proc-783-b5.11
DO - 10.1557/proc-783-b5.11
M3 - Conference article
AN - SCOPUS:3042673604
SN - 0272-9172
VL - 783
SP - 41
EP - 46
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Materials, Integration and Packaging Issues for High - Frequency Devices
Y2 - 1 December 2003 through 3 December 2003
ER -