TY - JOUR
T1 - A new HCBT with a partially etched collector
AU - Suligoj, Tomislav
AU - Biljanović, Petar
AU - Sin, Johnny K.O.
AU - Wang, Kang L.
PY - 2005/3
Y1 - 2005/3
N2 - A novel horizontal current bipolar transistor (HCBT), suitable for the integration with the pillar-like MOSFETs, is processed with the reduced volume of the parasitic regions, achieved by the partial etching of the collector n-hill region and the self-protection of the p+ extrinsic base from tetramethyl ammonium hydroxide etch-back. The HCBT fabricated by a low-cost technology exhibits the cutoff frequency (fT) of 30.4 GHz, the maximum frequency of oscillations (fmax) of 35 GHz and the collector-emitter breakdown voltage (BVCEO) of 4.2 V, which are the highest fT and the highest fTBVCEO product among the lateral bipolar transistors (LBTs).
AB - A novel horizontal current bipolar transistor (HCBT), suitable for the integration with the pillar-like MOSFETs, is processed with the reduced volume of the parasitic regions, achieved by the partial etching of the collector n-hill region and the self-protection of the p+ extrinsic base from tetramethyl ammonium hydroxide etch-back. The HCBT fabricated by a low-cost technology exhibits the cutoff frequency (fT) of 30.4 GHz, the maximum frequency of oscillations (fmax) of 35 GHz and the collector-emitter breakdown voltage (BVCEO) of 4.2 V, which are the highest fT and the highest fTBVCEO product among the lateral bipolar transistors (LBTs).
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U2 - 10.1109/LED.2004.842437
DO - 10.1109/LED.2004.842437
M3 - Article
AN - SCOPUS:15544386458
VL - 26
SP - 200
EP - 202
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 3
ER -