A new HCBT with a partially etched collector

Tomislav Suligoj, Petar Biljanović, Johnny K.O. Sin, Kang L. Wang

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

A novel horizontal current bipolar transistor (HCBT), suitable for the integration with the pillar-like MOSFETs, is processed with the reduced volume of the parasitic regions, achieved by the partial etching of the collector n-hill region and the self-protection of the p+ extrinsic base from tetramethyl ammonium hydroxide etch-back. The HCBT fabricated by a low-cost technology exhibits the cutoff frequency (fT) of 30.4 GHz, the maximum frequency of oscillations (fmax) of 35 GHz and the collector-emitter breakdown voltage (BVCEO) of 4.2 V, which are the highest fT and the highest fTBVCEO product among the lateral bipolar transistors (LBTs).

原文English
頁(從 - 到)200-202
頁數3
期刊IEEE Electron Device Letters
26
發行號3
DOIs
出版狀態Published - 2005 3月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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