A lattice-matched In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor has been fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Meanwhile, the larger valence discontinuity (ΔEV=460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement. An offset voltage as low as 50 mV along with a current gain of 85 is achieved.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)