A New Method to Electrically Determine Effective MOSFET Channel Width

Ying Ren Ma, Kang L. Wang

研究成果: Article同行評審

21 引文 斯高帕斯(Scopus)

摘要

A new, easy, and accurate electrical measurement method for determining process bias of MOSFET channel width is proposed. This method is based on the linear relationship between the effective width and the channel conductance (or drain current) of a MOSFET operating in the linear region. Constant and sufficiently high gate voltages compared with the threshold voltage of the device are used in the measurement to minimize the error due to the threshold-voltage variation with W in narrow-width devices. The validity of the method is supported by identical results obtained using different gate voltages.

原文English
頁(從 - 到)1825-1827
頁數3
期刊IEEE Transactions on Electron Devices
29
發行號12
DOIs
出版狀態Published - 1982 12月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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