A new p-Ni1-xO: Li/n-Si heterojunction solar cell fabricated by RF magnetron sputtering

Feng Hao Hsu, Na Fu Wang, Yu Zen Tsai, Yu Song Cheng, Mau-phon Houng

研究成果: Article

13 引文 (Scopus)

摘要

This study reports the fabrication of p-type Ni1-xO : Li/n-Si heterojunction solar cells (HJSCs) by depositing Li-doped Ni1-xO (p-Ni1-xO : Li) on a n-Si substrate (P+/n) using RF magnetron sputtering. Films deposited on glass substrates at various working pressures were first analysed to estimate the optoelectrical properties of p-Ni1-xO : Li thin films. These experimental results show that the best working pressure was 6 mTorr, which produced a surface roughness of 2.85 nm, a grain size of 19.8 nm, a resistivity of 2.7 Ω cm, a visible transmittance of 49.16%, a work function of 5.32 eV, and a refractive index of 2.54. Although the p-Ni1-xO : Li thin film has a relatively high work function, its conversion efficiency is 2.338% (Voc: 345 mV, J sc: 22.048 mA cm-2, and FF: 0.307). This study proposes that reduce interface states and improve the optoelectrical properties of p-NiO are two important issues because they can directly and significantly affect the conversion efficiency of p-Ni1-xO : Li/n-Si HJSC. In summary, this high Voc value indicates that p-Ni1-xO : Li thin film is more suitable than ZnO/n-Si structures as an emitter layer for transparent conducting oxide/n-Si HJSC applications.

原文English
文章編號275104
期刊Journal of Physics D: Applied Physics
46
發行號27
DOIs
出版狀態Published - 2013 七月 10

指紋

Magnetron sputtering
Heterojunctions
heterojunctions
Solar cells
magnetron sputtering
solar cells
Thin films
Conversion efficiency
thin films
Interface states
Substrates
Oxides
Refractive index
transmittance
surface roughness
emitters
grain size
Surface roughness
refractivity
conduction

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

引用此文

Hsu, Feng Hao ; Wang, Na Fu ; Tsai, Yu Zen ; Cheng, Yu Song ; Houng, Mau-phon. / A new p-Ni1-xO : Li/n-Si heterojunction solar cell fabricated by RF magnetron sputtering. 於: Journal of Physics D: Applied Physics. 2013 ; 卷 46, 編號 27.
@article{b751f108d3e9455ca257792d0db593a0,
title = "A new p-Ni1-xO: Li/n-Si heterojunction solar cell fabricated by RF magnetron sputtering",
abstract = "This study reports the fabrication of p-type Ni1-xO : Li/n-Si heterojunction solar cells (HJSCs) by depositing Li-doped Ni1-xO (p-Ni1-xO : Li) on a n-Si substrate (P+/n) using RF magnetron sputtering. Films deposited on glass substrates at various working pressures were first analysed to estimate the optoelectrical properties of p-Ni1-xO : Li thin films. These experimental results show that the best working pressure was 6 mTorr, which produced a surface roughness of 2.85 nm, a grain size of 19.8 nm, a resistivity of 2.7 Ω cm, a visible transmittance of 49.16{\%}, a work function of 5.32 eV, and a refractive index of 2.54. Although the p-Ni1-xO : Li thin film has a relatively high work function, its conversion efficiency is 2.338{\%} (Voc: 345 mV, J sc: 22.048 mA cm-2, and FF: 0.307). This study proposes that reduce interface states and improve the optoelectrical properties of p-NiO are two important issues because they can directly and significantly affect the conversion efficiency of p-Ni1-xO : Li/n-Si HJSC. In summary, this high Voc value indicates that p-Ni1-xO : Li thin film is more suitable than ZnO/n-Si structures as an emitter layer for transparent conducting oxide/n-Si HJSC applications.",
author = "Hsu, {Feng Hao} and Wang, {Na Fu} and Tsai, {Yu Zen} and Cheng, {Yu Song} and Mau-phon Houng",
year = "2013",
month = "7",
day = "10",
doi = "10.1088/0022-3727/46/27/275104",
language = "English",
volume = "46",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "27",

}

A new p-Ni1-xO : Li/n-Si heterojunction solar cell fabricated by RF magnetron sputtering. / Hsu, Feng Hao; Wang, Na Fu; Tsai, Yu Zen; Cheng, Yu Song; Houng, Mau-phon.

於: Journal of Physics D: Applied Physics, 卷 46, 編號 27, 275104, 10.07.2013.

研究成果: Article

TY - JOUR

T1 - A new p-Ni1-xO

T2 - Li/n-Si heterojunction solar cell fabricated by RF magnetron sputtering

AU - Hsu, Feng Hao

AU - Wang, Na Fu

AU - Tsai, Yu Zen

AU - Cheng, Yu Song

AU - Houng, Mau-phon

PY - 2013/7/10

Y1 - 2013/7/10

N2 - This study reports the fabrication of p-type Ni1-xO : Li/n-Si heterojunction solar cells (HJSCs) by depositing Li-doped Ni1-xO (p-Ni1-xO : Li) on a n-Si substrate (P+/n) using RF magnetron sputtering. Films deposited on glass substrates at various working pressures were first analysed to estimate the optoelectrical properties of p-Ni1-xO : Li thin films. These experimental results show that the best working pressure was 6 mTorr, which produced a surface roughness of 2.85 nm, a grain size of 19.8 nm, a resistivity of 2.7 Ω cm, a visible transmittance of 49.16%, a work function of 5.32 eV, and a refractive index of 2.54. Although the p-Ni1-xO : Li thin film has a relatively high work function, its conversion efficiency is 2.338% (Voc: 345 mV, J sc: 22.048 mA cm-2, and FF: 0.307). This study proposes that reduce interface states and improve the optoelectrical properties of p-NiO are two important issues because they can directly and significantly affect the conversion efficiency of p-Ni1-xO : Li/n-Si HJSC. In summary, this high Voc value indicates that p-Ni1-xO : Li thin film is more suitable than ZnO/n-Si structures as an emitter layer for transparent conducting oxide/n-Si HJSC applications.

AB - This study reports the fabrication of p-type Ni1-xO : Li/n-Si heterojunction solar cells (HJSCs) by depositing Li-doped Ni1-xO (p-Ni1-xO : Li) on a n-Si substrate (P+/n) using RF magnetron sputtering. Films deposited on glass substrates at various working pressures were first analysed to estimate the optoelectrical properties of p-Ni1-xO : Li thin films. These experimental results show that the best working pressure was 6 mTorr, which produced a surface roughness of 2.85 nm, a grain size of 19.8 nm, a resistivity of 2.7 Ω cm, a visible transmittance of 49.16%, a work function of 5.32 eV, and a refractive index of 2.54. Although the p-Ni1-xO : Li thin film has a relatively high work function, its conversion efficiency is 2.338% (Voc: 345 mV, J sc: 22.048 mA cm-2, and FF: 0.307). This study proposes that reduce interface states and improve the optoelectrical properties of p-NiO are two important issues because they can directly and significantly affect the conversion efficiency of p-Ni1-xO : Li/n-Si HJSC. In summary, this high Voc value indicates that p-Ni1-xO : Li thin film is more suitable than ZnO/n-Si structures as an emitter layer for transparent conducting oxide/n-Si HJSC applications.

UR - http://www.scopus.com/inward/record.url?scp=84879919865&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879919865&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/46/27/275104

DO - 10.1088/0022-3727/46/27/275104

M3 - Article

AN - SCOPUS:84879919865

VL - 46

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 27

M1 - 275104

ER -